Two Step Synthesis of CuS Thin Films via High Vacuum Sulphidation

Yıl 2024, Cilt: 27 Sayı: 4, 1581 - 1588, 25.09.2024

Ali Yıldırım , Abdullah Ceylan

https://doi.org/10.2339/politeknik.1276728

Öz

In this study, synthesis of CuS thin films on soda lime glass (SLG) substrates has been investigated. The synthesis method is based on high vacuum post-sulphidation of Cu thin films deposited by rf. magnetron sputtering. Sputtering conditions have been optimized so as to reduce grain size for better diffusion of S atoms through grain boundaries. XRD pattern of the precursor Cu sample revealed fcc structure with an average crystallite size of 24 nm. Best sulphidation was obtained at 175 oC for 60 min. The crystallite size of CuS calculated from the dominant peak of (110) planes was approximately 48 nm while average grain size observed via SEM was about 400 nm. Raman spectroscopy confirmed CuS structure by scattering peaks at around 467-472 cm-1. Elemental mapping unveiled homogenous distribution of Cu and S atoms over the surface. According to EDS data, at% compositions of Cu and S were 51.6% and 48.4%, respectively. Moreover, SIMS investigation has demonstrated uniformity of S atoms through the thickness of CuS thin film. Although XRD, Raman, and EDS analysis have resulted in predominant formation of CuS structure, existence of Cu2S phase with a strong luminescence peak located at 1.8 eV was determined by PL spectroscopy.

Anahtar Kelimeler

CuS thin film, vacum sulphidation, sputtering, SIMS

Destekleyen Kurum

Tübitak

Proje Numarası

117F177

Teşekkür

This work has been partially supported by TUBITAK with the project number 117F177.

Yüksek Vakumda Sülfürleme ile CuS İnce Filmlerin İki Aşamalı Sentezi

Öz

Bu çalışmada, soda kireç camı (SLG) altlıklar üzerinde CuS ince filmlerinin sentezi incelenmiştir. Sentez yöntemi, rf püskürtme tarafından biriktirilen Cu ince filmlerin yüksek vakumlu sülfürlenmesine dayanır. Büyütme koşulları, S atomlarının tanecik sınırlarından daha iyi difüzyonu için tane boyutunu küçültecek şekilde optimize edilmiştir. Öncü Cu örneğinin XRD paterni, ortalama kristalit boyutu 24 nm olan fcc yapısını ortaya çıkardı. En iyi sülfürleme koşulları 175 oC'de 60 dakikada elde edilmiştir. (110) düzlemlerinin baskın zirvesinden hesaplanan CuS kristalit boyutu yaklaşık 48 nm iken, SEM ile gözlemlenen ortalama tane boyutu yaklaşık 400 nm idi. Raman spektroskopisi, 467-472 cm-1 civarındaki tepe noktaları CuS yapısını doğruladı. Elemental haritalama, Cu ve S atomlarının yüzey üzerinde homojen dağılımını ortaya çıkardı. EDS verilerine göre %'de Cu ve S bileşimleri sırasıyla %51.6 ve %48.4 idi. Ayrıca, SIMS araştırması, CuS ince filminin kalınlığı boyunca S atomlarının homojenliğini göstermiştir. XRD, Raman ve EDS analizi CuS yapısının baskın oluşumuyla sonuçlanmış olsa da, 1.8 eV'de bulunan güçlü bir lüminesans zirvesine sahip Cu2S fazının varlığı PL spektroskopisi ile belirlendi.

Anahtar Kelimeler

CuS ince filmler, vakumda sülfürleme, püskürtme, SIMS

Proje Numarası

117F177

Kaynakça

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