The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range

Yıl 2017, , 1286 - 1292, 01.12.2017

Durmuş Ali Aldemir , Ali Kökce Ahmet Faruk Özdemir

https://doi.org/10.16984/saufenbilder.279996

Cited By: 11

Öz

The
current-voltage (I-V) data of Ni/n-GaAs Schottky diodes with 50 nm Schottky metal thickness has been
measured in the temperature range of 60 K to 320 K. The important contact
parameters of Ni/n-GaAs Schottky
diodes have been obtained by using conventional I-V method, Norde method,
generalized Norde method, and Cheung functions for each temperature. Then, the
results have been compared each other.

Anahtar Kelimeler

Schottky Diode, Conventional I-V Method, Cheung Method, Norde Method, Generalized Norde Method, temperature dependence

Schottky diyot parametrelerini belirlemede kullanılan metotların geniş bir sıcaklık aralığı için kıyaslanması

Öz

50 nm Schottky kontak kalınlığına sahip Ni/n-GaAs Schottky diyotlarının
akım-gerilim (I-V) verileri 60 K’den 320 K’e kadar olan geniş bir sıcaklık
aralığında ölçüldü. Ni/n-GaAs
Schottky diyotlarının önemli kontak parametreleri geleneksel I-V
metodu, Norde metodu, genelleştirilmiş Norde metodu ve Cheung fonksiyonları
kullanılarak her bir sıcaklık değeri için ayrı ayrı elde edildi. Daha sonra
sonuçlar birbirleriyle kıyaslandı.

Anahtar Kelimeler

Schottky Diyot, Geleneksel I-V metot, Cheung metot, Norde Metot, Genelleştirilmiş Norde Metot, Sıcaklık Bağlılığı

Kaynakça

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