Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy

Yıl 2017, Cilt: 21 Sayı: 3, 738 - 742, 01.08.2017

Ersin Kayahan

https://doi.org/10.19113/sdufbed.19374

Cited By: 1

Öz

The observation of effective luminescence (PL) from the porous silicon (PS) at the visible region at room temperature is one of the prevalent topics in recent years. This is why there are many application areas in optoelectronics integration with the existing silicon technology. However, non-uniformity of PL is an important problem and should be solved before using its future applications as light emitting diodes (LEDs). In this study, spatial distribution properties of photoluminescence of porous silicon were investigated by imaging spectroscopy (IS) on macro (95 mm²) and micro (10 µm²) scale. It has been showed that the spatial distribution of PL is not homogeneous. The PS luminescence homogeneity is also affected by the production parameters and the post-anodization environmental conditions. It was showed that luminescence intensity and luminescence homogeneity increased with atmospheric aging.

Anahtar Kelimeler

Porous silicon, Imaging spectroscopy; Photoluminescence

Kaynakça

• [1] Ensafi A-A., Ahmadi N., Rezaei B. 2017. Nickel nanoparticles supported on porous silicon flour application as a non-enzymatic electrochemical glucose sensor. Sensors and Actuators B: Chemical, 239, 807-815.
• [2] Riahi R., Derbali L., Ouertani B., Ezzaouia H. 2017. Temperature dependence of nickel oxide effect on the optoelectronic properties of porous silicon. Applied Surface Science, 404, 34-39.
• [3] Kayahan E. 2011. The role of surface oxidation on luminescence degradation of porous silicon. Applied Surface Science, 257, 4311–4316
• [4] Esmer K., Kayahan E. 2009. Influence of alkali metallization (Li, Na and K) on photoluminescence properties of porous silicon. Applied Surface Science, 256-5, 1548-1552.
• [5] Fujiwara Y., Nishitani H., Nakata H., Ohyama T. 1992. Structured photoluminescence spectrum in laterally anodized porous silicon. Jpn. J. Appl. Phys. 31, L1763.
• [6] Ohmukai M., Tsutsumi Y.1997. Characterization of porous silicon by means of photoacoustic spectroscopy. Thin Solid Films, 302-1, 51-53.
• [7] Hossain SM., Das J., Chakraborty S., Dutta SK., Saha H. 2002. Electrode design and planar uniformity of anodically etched large area porous silicon. Semicond. Sci. Tech. 17, 55-59.
• [8] Nakagava K., Nishida A., Shimada T., Yamaguchi H., Eguchi K. 1992. Fine structure of porous si with visible photoluminescence. Jpn. J. Appl. Phys. 31, L515-L517.
• [9] Kayahan E. 2005. Imaging Spectroscopy Studies of Porous Silicon: The effect of excitation energy on photoluminescence. Süleyman Demirel Üni. Fen Bil. Enst. Dergisi, 9-2, 19-23.
• [10] Halimaoui A. 1995. Porous Silicon: Material processing, properties and applications. Porous silicon science and technology, Ed. By: Jen Clode Vial et al. p:332, Springer-Verlag.
• [11] Toyoda T., Yamazaki T., Shen Q. 2003. Exposure time dependence of the photoacoustic and photoluminescence intensities of porous silicon with different wavelengths of excitation light. Review of Scientific Instruments, 74-1, 869-871.
• [12] Takasuka E., Kamei K. 1994. Microstructure of porous silicon and its correlation with photoluminescence. Appl. Phys. Lett. 65(4), 484-486.
• [13] Tsai C., Li K-H., Kinosky D-S., et al. 1992. Thermal treatment studies of the photoluminescence intensity of porous silicon. App. Phys. Lett. 60-14, 1700-1702.
• [14] Aouida S., Saadoun M., Boujmil M-F., Ben Rabha M., Bessais B. 2004. Effect of UV irradiations on the structural and optical features of porous silicon: application in silicon solar cells. Applied Surface Science, 238, 193–198.