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Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures

Yıl 2021, Cilt 47, Sayı 2, 203 - 213, 30.10.2021
https://doi.org/10.35238/sufefd.999508

Öz

Recently, interfacial layer such as metal oxide, insulator and polymer have been used by scientists between the metal and semiconductor to increase the stability of the metal-semiconductor heterojunctions. These materials have been varied according to their usage aims. In this study, graphene nanoribbons (GNR) and 7,7,8,8 Tetracyanoquinodimethane (TCNQ, C12H4N4) layer has been used as interfacial layer between the metal and semiconductor for photodiode applications. The TCNQ layer collects and extracts more electrons in the interface of the device and is used as electron acceptor material for organic solar cells. Herein, we fabricated Al/p-Si/Al, Al/p-Si/TCNQ/Al and Al/p-Si/TCNQ:GNR/Al heterojunctions by physical vapor deposition technique. I-V measurements has been employed under dark and various light illumination conditions to show dielectric properties of the fabricated heterojunctions. From current-voltage characteristics, we calculated the electronic parameters such as ideality factor, barrier heights, series resistances and rise times. It can be concluded from overall results that TCNQ and TCNQ:GNR layers had a major impact on quality and can be considered as quite proper materials for optoelectronic applications.

Kaynakça

  • Anthopoulos, T. D., Singh, B., Marjanovic, N., Sariciftci, N. S., Montaigne Ramil, A., Sitter, H., Cölle, M., & De Leeuw, D. M. (2006). High performance n -channel organic field-effect transistors and ring oscillators based on C60 fullerene films. Applied Physics Letters, 89(21), 7–10. https://doi.org/10.1063/1.2387892
  • Berk, N., Seymen, H., Orak, I., & Karataş, Ş. (2021). The electrical characteristics of metal–semiconductor hetero-structures with graphene oxide and perylenetetracarboxylic dianhydride interface. Journal of Materials Science: Materials in Electronics, 32(13), 17500–17511. https://doi.org/10.1007/s10854-021-06283-w
  • Cifci, O. S., Bakir, M., Meyer, J. L., & Kocyigit, A. (2018). Morphological and electrical properties of ATSP/p-Si photodiode. Materials Science in Semiconductor Processing, 74, 175–182. https://doi.org/10.1016/J.MSSP.2017.10.039
  • Çimen, A., Şağban, H. M., Özdemir, T., & Özmen, Ö. T. (2018). F4-TCNQ Concentration Dependent Capacitance-Voltage (C-V) and Conductivity-Voltage (G/w-V) Characteristics of the Au/P3HT:F4-TCNQ/N-Si (MPS) Schottky Barrier Diodes. "International Journal of Engineering Science Invention, 7(July), 17–25.
  • Erdal, M. O., Koyuncu, M., Doğan, K., Öztürk, T., Kocyigit, A., & Yıldırım, M. (2021). The modification of the characteristics of ZnO nanofibers by TCNQ doping content. Journal of Materials Science: Materials in Electronics, 32(13), 17220–17229. https://doi.org/10.1007/s10854-021-06199-5
  • Erdal, M. O., Yıldırım, M., & Kocyigit, A. (2019). A comparison of the electrical characteristics of TiO2/p-Si/Ag, GNR-TiO2/p-Si/Ag and MWCNT-TiO2/p-Si/Ag photodiodes. Journal of Materials Science: Materials in Electronics, 30(14), 13617–13626. https://doi.org/10.1007/s10854-019-01731-0
  • Eroğlu, A., Demirezen, S., Azizian-Kalandaragh, Y., & Altındal, Ş. (2020). A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer. Journal of Materials Science: Materials in Electronics, 31(17), 14466–14477. https://doi.org/10.1007/s10854-020-04006-1
  • Gökçen, M., Altuntaş, H., Altndal, Ş., & Özçelik, S. (2012). Frequency and voltage dependence of negative capacitance in Au/SiO 2/n-GaAs structures. Materials Science in Semiconductor Processing, 15(1), 41–46. https://doi.org/10.1016/j.mssp.2011.08.001
  • Hu, X., Li, X., Li, G., Ji, T., Ai, F., Wu, J., Ha, E., & Hu, J. (2021). Recent Progress of Methods to Enhance Photovoltaic Effect for Self-Powered Heterojunction Photodetectors and Their Applications in Inorganic Low-Dimensional Structures. In Advanced Functional Materials (p. 2011284). John Wiley and Sons Inc. https://doi.org/10.1002/adfm.202011284
  • İlhan, M., Koç, M. M., Coşkun, B., Erkovan, M., & Yakuphanoğlu, F. (2021). Cd dopant effect on structural and optoelectronic properties of TiO2 solar detectors. Journal of Materials Science: Materials in Electronics, 32(2), 2346–2365. https://doi.org/10.1007/s10854-020-05000-3
  • Kacus, H., Sahin, Y., Aydogan, S., Incekara, U., & Yilmaz, M. (2020). Co/aniline blue/silicon sandwich hybrid heterojunction for photodiode and low-temperature applications. Journal of Sandwich Structures & Materials, 109963622090994. https://doi.org/10.1177/1099636220909946
  • Karadaş, S., Yerişkin, S. A., Balbaşı, M., & Azizian-Kalandaragh, Y. (2021). Complex dielectric, complex electric modulus, and electrical conductivity in Al/(Graphene-PVA)/p-Si (metal-polymer-semiconductor) structures. Journal of Physics and Chemistry of Solids, 148(February 2020). https://doi.org/10.1016/j.jpcs.2020.109740
  • Kargar, A., & Lee, C. (2009). Graphene nanoribbon schottky diodes using asymmetric contacts. 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009, 8, 243–245.
  • Kim, M. S., Lee, G. J., Kim, H. M., & Song, Y. M. (2017). Parametric optimization of lateral NIPIN phototransistors for flexible image sensors. Sensors (Switzerland), 17(8), 1774. https://doi.org/10.3390/s17081774
  • Koçyiğit, A., Erdal, M. O., Ozel, F., & Yıldırım, M. (2021). Photodiode behaviors of the AgSbS 2 nanocrystals in a Schottky structure. Nanotechnology, 32(38), 385204. https://doi.org/10.1088/1361-6528/ac0b64
  • Kocyiğit, A., SARILMAZ, A., ÖZTÜRK, T., OZEL, F., & Murat, Y. (2021). The Au / CuNiCoS 4 / p -Si photodiode : electrical and morphological characterization. 0–25. https://doi.org/10.3762/bxiv.2021.34.v1
  • Kocyigit, A., Yıldırım, M., Sarılmaz, A., & Ozel, F. (2019). The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization. Journal of Alloys and Compounds, 780, 186–192. https://doi.org/10.1016/j.jallcom.2018.11.372
  • Kostov, P., Gaberl, W., & Zimmermann, H. (2013). High-speed bipolar phototransistors in a 180 nm CMOS process. Optics and Laser Technology, 46(1), 6–13. https://doi.org/10.1016/j.optlastec.2012.04.011
  • Kyoung, S., Jung, E. S., & Sung, M. Y. (2016). Post-annealing processes to improve inhomogeneity of Schottky barrier height in Ti/Al 4H-SiC Schottky barrier diode. Microelectronic Engineering, 154, 69–73. https://doi.org/10.1016/j.mee.2016.01.013
  • Meftah, S. E., Benhaliliba, M., Kaleli, M., Benouis, C. E., Yavru, C. A., & Bayram, A. B. (2020). Optical and electrical characterization of thin film MSP heterojunction based on organic material Al/p-Si/P3HT/Ag. Physica B: Condensed Matter, 593(April), 412238. https://doi.org/10.1016/j.physb.2020.412238
  • Mun, J., Kang, J., Zheng, Y., Luo, S., Wu, Y., Gong, H., Lai, J. C., Wu, H. C., Xue, G., Tok, J. B. H., & Bao, Z. (2020). F4-TCNQ as an Additive to Impart Stretchable Semiconductors with High Mobility and Stability. Advanced Electronic Materials, 6(6), 1–9. https://doi.org/10.1002/aelm.202000251
  • Munikrishana Reddy, Y., Nagaraj, M. K., Siva Pratap Reddy, M., Lee, J. H., & Rajagopal Reddy, V. (2013). Temperature-Dependent Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Ni/Cu/n-InP Schottky Barrier Diodes. Brazilian Journal of Physics, 43(1–2), 13–21. https://doi.org/10.1007/s13538-013-0120-7
  • Orhan, Z., Cinan, E., Çaldıran, Z., Kurucu, Y., & Daş, E. (2020). Synthesis of CuO–graphene nanocomposite material and the effect of gamma radiation on CuO–graphene/p-Si junction diode. Journal of Materials Science: Materials in Electronics, 31(15), 12715–12724. https://doi.org/10.1007/s10854-020-03823-8
  • Özmen, A., Aydogan, S., & Yilmaz, M. (2019). Fabrication of spray derived nanostructured n-ZnO/p-Si heterojunction diode and investigation of its response to dark and light. Ceramics International. https://doi.org/10.1016/j.ceramint.2019.04.210
  • Rahmani, M., Ismail, R., Ahmadi, M. T., Kiani, M. J., Saeidmanesh, M., Karimi, F. A. H., Akbari, E., & Rahmani, K. (2013). The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance. Journal of Nanomaterials, 2013. https://doi.org/10.1155/2013/636239
  • Ramadan, R., & Martín-Palma, R. J. (2020). Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells. https://doi.org/10.3390/en13092165
  • Rouger, N., & Maréchal, A. (2019). Design of diamond power devices: Application to Schottky barrier diodes. Energies, 12(12). https://doi.org/10.3390/en12122387
  • Sato, S. (2017). Application of graphene to electronic devices. AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, 2016(2016), 90–93. https://doi.org/10.1021/acsnano.7b02316.GRAPHENE
  • Shamsir, S., Parvin Poly, L., Chakraborty, R., & Subrina, S. (2021). Current-voltage model of a graphene nanoribbon p-n junction and Schottky junction diode. IET Circuits, Devices and Systems, January. https://doi.org/10.1049/cds2.12092
  • Shao, Z., Jiang, T., Zhang, X., Zhang, X., Wu, X., Xia, F., Xiong, S., Lee, S. T., & Jie, J. (2019). Memory phototransistors based on exponential-association photoelectric conversion law. Nature Communications, 10(1), 1–10. https://doi.org/10.1038/s41467-019-09206-w Srivastava, A., & Chakrabarti, P. (2015). An organic Schottky diode (OSD) based on a-silicon/polycarbazole contact. Synthetic Metals, 207, 96–101. https://doi.org/10.1016/j.synthmet.2015.05.024
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Organik Yariiletken Tetrasiyaokuinodimetan Tabanlı Heteroyapıların Optoelektronik Özelliklerinin Araştırılması

Yıl 2021, Cilt 47, Sayı 2, 203 - 213, 30.10.2021
https://doi.org/10.35238/sufefd.999508

Öz

Son yıllarda bilim insanları metal-yarıiletken heteroeklemlerinin dayanıklılığını arttırmak maksadıyla metal ile yarıiletken arasına metal oksit, yalıtkan veya da polimer tabakalar eklemektedirler. Bu malzemeler amaca göre değişiklik göstermektedir. Bu çalışma kapsamında, fotodiyot uygulamaları için metal ve yarı iletken arasında ara yüzey olarak grafen nanoribbon (GNR) ve 7,7,8,8 Tetrasiyaokuinodimetan-(Tetracyanoquinodimethane TCNQ, C12H4N4) katmanı kullanılmıştır. TCNQ katmanı, cihazın arayüzünde daha fazla elektron toplar ve çıkarır ve organik güneş pillerinde elektron alıcı malzeme olarak kullanılır. Daha sonra fiziksel buhar biriktirme yöntemiyle Al/p-Si/Al, Al/p-Si/TCNQ/Al ve Al/p-Si/TCNQ:GNR/Al heteroeklemleri elde edilmiştir. Elektriksel karakterizasyon kapsamında Akım-voltaj ölçümleri hem karanlık ortamda hemde farklı aydınlatma değerlerinde gerçekleştirilmiştir. Akım-voltaj karakteristiklerinden, idealite faktörü, bariyer yüksekliği, seri direnç ve yükselme zamanı gibi elektronik parametreler hesaplanmıştır. Sonuç olarak, TCNQ ve TCNQ:GNR katmanlarının kalite üzerinde büyük bir etkisi olduğu ve optoelektronik uygulamalar için oldukça uygun malzemeler olarak kabul edilebilebilir.

Kaynakça

  • Anthopoulos, T. D., Singh, B., Marjanovic, N., Sariciftci, N. S., Montaigne Ramil, A., Sitter, H., Cölle, M., & De Leeuw, D. M. (2006). High performance n -channel organic field-effect transistors and ring oscillators based on C60 fullerene films. Applied Physics Letters, 89(21), 7–10. https://doi.org/10.1063/1.2387892
  • Berk, N., Seymen, H., Orak, I., & Karataş, Ş. (2021). The electrical characteristics of metal–semiconductor hetero-structures with graphene oxide and perylenetetracarboxylic dianhydride interface. Journal of Materials Science: Materials in Electronics, 32(13), 17500–17511. https://doi.org/10.1007/s10854-021-06283-w
  • Cifci, O. S., Bakir, M., Meyer, J. L., & Kocyigit, A. (2018). Morphological and electrical properties of ATSP/p-Si photodiode. Materials Science in Semiconductor Processing, 74, 175–182. https://doi.org/10.1016/J.MSSP.2017.10.039
  • Çimen, A., Şağban, H. M., Özdemir, T., & Özmen, Ö. T. (2018). F4-TCNQ Concentration Dependent Capacitance-Voltage (C-V) and Conductivity-Voltage (G/w-V) Characteristics of the Au/P3HT:F4-TCNQ/N-Si (MPS) Schottky Barrier Diodes. "International Journal of Engineering Science Invention, 7(July), 17–25.
  • Erdal, M. O., Koyuncu, M., Doğan, K., Öztürk, T., Kocyigit, A., & Yıldırım, M. (2021). The modification of the characteristics of ZnO nanofibers by TCNQ doping content. Journal of Materials Science: Materials in Electronics, 32(13), 17220–17229. https://doi.org/10.1007/s10854-021-06199-5
  • Erdal, M. O., Yıldırım, M., & Kocyigit, A. (2019). A comparison of the electrical characteristics of TiO2/p-Si/Ag, GNR-TiO2/p-Si/Ag and MWCNT-TiO2/p-Si/Ag photodiodes. Journal of Materials Science: Materials in Electronics, 30(14), 13617–13626. https://doi.org/10.1007/s10854-019-01731-0
  • Eroğlu, A., Demirezen, S., Azizian-Kalandaragh, Y., & Altındal, Ş. (2020). A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer. Journal of Materials Science: Materials in Electronics, 31(17), 14466–14477. https://doi.org/10.1007/s10854-020-04006-1
  • Gökçen, M., Altuntaş, H., Altndal, Ş., & Özçelik, S. (2012). Frequency and voltage dependence of negative capacitance in Au/SiO 2/n-GaAs structures. Materials Science in Semiconductor Processing, 15(1), 41–46. https://doi.org/10.1016/j.mssp.2011.08.001
  • Hu, X., Li, X., Li, G., Ji, T., Ai, F., Wu, J., Ha, E., & Hu, J. (2021). Recent Progress of Methods to Enhance Photovoltaic Effect for Self-Powered Heterojunction Photodetectors and Their Applications in Inorganic Low-Dimensional Structures. In Advanced Functional Materials (p. 2011284). John Wiley and Sons Inc. https://doi.org/10.1002/adfm.202011284
  • İlhan, M., Koç, M. M., Coşkun, B., Erkovan, M., & Yakuphanoğlu, F. (2021). Cd dopant effect on structural and optoelectronic properties of TiO2 solar detectors. Journal of Materials Science: Materials in Electronics, 32(2), 2346–2365. https://doi.org/10.1007/s10854-020-05000-3
  • Kacus, H., Sahin, Y., Aydogan, S., Incekara, U., & Yilmaz, M. (2020). Co/aniline blue/silicon sandwich hybrid heterojunction for photodiode and low-temperature applications. Journal of Sandwich Structures & Materials, 109963622090994. https://doi.org/10.1177/1099636220909946
  • Karadaş, S., Yerişkin, S. A., Balbaşı, M., & Azizian-Kalandaragh, Y. (2021). Complex dielectric, complex electric modulus, and electrical conductivity in Al/(Graphene-PVA)/p-Si (metal-polymer-semiconductor) structures. Journal of Physics and Chemistry of Solids, 148(February 2020). https://doi.org/10.1016/j.jpcs.2020.109740
  • Kargar, A., & Lee, C. (2009). Graphene nanoribbon schottky diodes using asymmetric contacts. 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009, 8, 243–245.
  • Kim, M. S., Lee, G. J., Kim, H. M., & Song, Y. M. (2017). Parametric optimization of lateral NIPIN phototransistors for flexible image sensors. Sensors (Switzerland), 17(8), 1774. https://doi.org/10.3390/s17081774
  • Koçyiğit, A., Erdal, M. O., Ozel, F., & Yıldırım, M. (2021). Photodiode behaviors of the AgSbS 2 nanocrystals in a Schottky structure. Nanotechnology, 32(38), 385204. https://doi.org/10.1088/1361-6528/ac0b64
  • Kocyiğit, A., SARILMAZ, A., ÖZTÜRK, T., OZEL, F., & Murat, Y. (2021). The Au / CuNiCoS 4 / p -Si photodiode : electrical and morphological characterization. 0–25. https://doi.org/10.3762/bxiv.2021.34.v1
  • Kocyigit, A., Yıldırım, M., Sarılmaz, A., & Ozel, F. (2019). The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization. Journal of Alloys and Compounds, 780, 186–192. https://doi.org/10.1016/j.jallcom.2018.11.372
  • Kostov, P., Gaberl, W., & Zimmermann, H. (2013). High-speed bipolar phototransistors in a 180 nm CMOS process. Optics and Laser Technology, 46(1), 6–13. https://doi.org/10.1016/j.optlastec.2012.04.011
  • Kyoung, S., Jung, E. S., & Sung, M. Y. (2016). Post-annealing processes to improve inhomogeneity of Schottky barrier height in Ti/Al 4H-SiC Schottky barrier diode. Microelectronic Engineering, 154, 69–73. https://doi.org/10.1016/j.mee.2016.01.013
  • Meftah, S. E., Benhaliliba, M., Kaleli, M., Benouis, C. E., Yavru, C. A., & Bayram, A. B. (2020). Optical and electrical characterization of thin film MSP heterojunction based on organic material Al/p-Si/P3HT/Ag. Physica B: Condensed Matter, 593(April), 412238. https://doi.org/10.1016/j.physb.2020.412238
  • Mun, J., Kang, J., Zheng, Y., Luo, S., Wu, Y., Gong, H., Lai, J. C., Wu, H. C., Xue, G., Tok, J. B. H., & Bao, Z. (2020). F4-TCNQ as an Additive to Impart Stretchable Semiconductors with High Mobility and Stability. Advanced Electronic Materials, 6(6), 1–9. https://doi.org/10.1002/aelm.202000251
  • Munikrishana Reddy, Y., Nagaraj, M. K., Siva Pratap Reddy, M., Lee, J. H., & Rajagopal Reddy, V. (2013). Temperature-Dependent Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Ni/Cu/n-InP Schottky Barrier Diodes. Brazilian Journal of Physics, 43(1–2), 13–21. https://doi.org/10.1007/s13538-013-0120-7
  • Orhan, Z., Cinan, E., Çaldıran, Z., Kurucu, Y., & Daş, E. (2020). Synthesis of CuO–graphene nanocomposite material and the effect of gamma radiation on CuO–graphene/p-Si junction diode. Journal of Materials Science: Materials in Electronics, 31(15), 12715–12724. https://doi.org/10.1007/s10854-020-03823-8
  • Özmen, A., Aydogan, S., & Yilmaz, M. (2019). Fabrication of spray derived nanostructured n-ZnO/p-Si heterojunction diode and investigation of its response to dark and light. Ceramics International. https://doi.org/10.1016/j.ceramint.2019.04.210
  • Rahmani, M., Ismail, R., Ahmadi, M. T., Kiani, M. J., Saeidmanesh, M., Karimi, F. A. H., Akbari, E., & Rahmani, K. (2013). The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance. Journal of Nanomaterials, 2013. https://doi.org/10.1155/2013/636239
  • Ramadan, R., & Martín-Palma, R. J. (2020). Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells. https://doi.org/10.3390/en13092165
  • Rouger, N., & Maréchal, A. (2019). Design of diamond power devices: Application to Schottky barrier diodes. Energies, 12(12). https://doi.org/10.3390/en12122387
  • Sato, S. (2017). Application of graphene to electronic devices. AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, 2016(2016), 90–93. https://doi.org/10.1021/acsnano.7b02316.GRAPHENE
  • Shamsir, S., Parvin Poly, L., Chakraborty, R., & Subrina, S. (2021). Current-voltage model of a graphene nanoribbon p-n junction and Schottky junction diode. IET Circuits, Devices and Systems, January. https://doi.org/10.1049/cds2.12092
  • Shao, Z., Jiang, T., Zhang, X., Zhang, X., Wu, X., Xia, F., Xiong, S., Lee, S. T., & Jie, J. (2019). Memory phototransistors based on exponential-association photoelectric conversion law. Nature Communications, 10(1), 1–10. https://doi.org/10.1038/s41467-019-09206-w Srivastava, A., & Chakrabarti, P. (2015). An organic Schottky diode (OSD) based on a-silicon/polycarbazole contact. Synthetic Metals, 207, 96–101. https://doi.org/10.1016/j.synthmet.2015.05.024
  • Taşçıoğlu, I., Tüzün Özmen, Şağban, H. M., Yağlıoğlu, E., & Altındal. (2017). Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode. Journal of Electronic Materials, 46(4), 2379–2386. https://doi.org/10.1007/s11664-017-5294-2
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Ayrıntılar

Birincil Dil İngilizce
Konular Fen
Bölüm Araştırma Makaleleri
Yazarlar

Burcu AVCI Bu kişi benim
SELÇUK ÜNİVERSİTESİ, FEN FAKÜLTESİ
0000-0003-4455-5684
Türkiye


Ali Akbar HUSSAINI
SELÇUK ÜNİVERSİTESİ
0000-0002-7128-9994
Türkiye


Mehmet Okan ERDAL Bu kişi benim
NECMETTİN ERBAKAN ÜNİVERSİTESİ
0000-0003-4469-3438
Türkiye


Murat YILDIRIM (Sorumlu Yazar)
SELCUK UNIVERSITY
0000-0002-4541-3752
Türkiye

Destekleyen Kurum Selcuk University BAP office
Proje Numarası 20211024.
Yayımlanma Tarihi 30 Ekim 2021
Yayınlandığı Sayı Yıl 2021, Cilt 47, Sayı 2

Kaynak Göster

Bibtex @araştırma makalesi { sufefd999508, journal = {Selçuk Üniversitesi Fen Fakültesi Fen Dergisi}, issn = {}, eissn = {2458-9411}, address = {Selçuk Üniversitesi Fen Fakültesi Biyoloji Bölümü 3. Kat No: 324, Selçuklu, 42250, KONYA}, publisher = {Selçuk Üniversitesi}, year = {2021}, volume = {47}, pages = {203 - 213}, doi = {10.35238/sufefd.999508}, title = {Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures}, key = {cite}, author = {Avcı, Burcu and Hussaını, Ali Akbar and Erdal, Mehmet Okan and Yıldırım, Murat} }
APA Avcı, B. , Hussaını, A. A. , Erdal, M. O. & Yıldırım, M. (2021). Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures . Selçuk Üniversitesi Fen Fakültesi Fen Dergisi , 47 (2) , 203-213 . DOI: 10.35238/sufefd.999508
MLA Avcı, B. , Hussaını, A. A. , Erdal, M. O. , Yıldırım, M. "Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures" . Selçuk Üniversitesi Fen Fakültesi Fen Dergisi 47 (2021 ): 203-213 <https://dergipark.org.tr/tr/pub/sufefd/issue/65581/999508>
Chicago Avcı, B. , Hussaını, A. A. , Erdal, M. O. , Yıldırım, M. "Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures". Selçuk Üniversitesi Fen Fakültesi Fen Dergisi 47 (2021 ): 203-213
RIS TY - JOUR T1 - Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures AU - Burcu Avcı , Ali Akbar Hussaını , Mehmet Okan Erdal , Murat Yıldırım Y1 - 2021 PY - 2021 N1 - doi: 10.35238/sufefd.999508 DO - 10.35238/sufefd.999508 T2 - Selçuk Üniversitesi Fen Fakültesi Fen Dergisi JF - Journal JO - JOR SP - 203 EP - 213 VL - 47 IS - 2 SN - -2458-9411 M3 - doi: 10.35238/sufefd.999508 UR - https://doi.org/10.35238/sufefd.999508 Y2 - 2021 ER -
EndNote %0 Selçuk Üniversitesi Fen Fakültesi Fen Dergisi Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures %A Burcu Avcı , Ali Akbar Hussaını , Mehmet Okan Erdal , Murat Yıldırım %T Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures %D 2021 %J Selçuk Üniversitesi Fen Fakültesi Fen Dergisi %P -2458-9411 %V 47 %N 2 %R doi: 10.35238/sufefd.999508 %U 10.35238/sufefd.999508
ISNAD Avcı, Burcu , Hussaını, Ali Akbar , Erdal, Mehmet Okan , Yıldırım, Murat . "Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures". Selçuk Üniversitesi Fen Fakültesi Fen Dergisi 47 / 2 (Ekim 2021): 203-213 . https://doi.org/10.35238/sufefd.999508
AMA Avcı B. , Hussaını A. A. , Erdal M. O. , Yıldırım M. Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures. sufefd. 2021; 47(2): 203-213.
Vancouver Avcı B. , Hussaını A. A. , Erdal M. O. , Yıldırım M. Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures. Selçuk Üniversitesi Fen Fakültesi Fen Dergisi. 2021; 47(2): 203-213.
IEEE B. Avcı , A. A. Hussaını , M. O. Erdal ve M. Yıldırım , "Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures", Selçuk Üniversitesi Fen Fakültesi Fen Dergisi, c. 47, sayı. 2, ss. 203-213, Eki. 2021, doi:10.35238/sufefd.999508


Selçuk Üniversitesi Fen Fakültesi Adına Dekan Prof. Dr. Semahat KÜÇÜKKOLBAŞI
Selçuk Üniversitesi Fen Fakültesi Fen Dergisi temel bilimlerde ve diğer uygulamalı bilimlerde özgün sonuçları olan Türkçe ve İngilizce makaleleri kabul eder. Dergide ayrıca güncel yenilikleri içeren derlemelere de yer verilebilir.
Selçuk Üniversitesi Fen Fakültesi Fen Dergisi;
İlk olarak 1981 yılında S.Ü. Fen-Edebiyat Fakültesi Dergisi olarak yayın hayatına başlamış; 1984 yılına kadar (Sayı 1-4) bu adla yayınlanmıştır.
1984 yılında S.Ü. Fen-Edeb. Fak. Fen Dergisi olarak adı değiştirilmiş 5. sayıdan itibaren bu isimle yayınlanmıştır.
3 Aralık 2008 tarih ve 27073 sayılı Resmi Gazetede yayımlanan 2008/4344 sayılı Bakanlar Kurulu Kararı ile Fen-Edebiyat Fakültesi; Fen Fakültesi ve Edebiyat Fakültesi olarak ayrılınca 2009 yılından itibaren dergi Fen Fakültesi Fen Dergisi olarak çıkmıştır.


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