Phase modulation of MoO2 -MoO3 nanostructured thin films through W-Doping; utilizing UV photodetection and gas sensing applications

Yıl 2022, Cilt: 48 Sayı: 1, 34 - 45, 25.04.2022

Shrouk E. Zaki , Mustafa Buyukharman Mohamed A. Basyooni , Arife Efe Görmez Ayşegül Sezgin Yasin Eker , Mücahit Yılmaz

https://doi.org/10.35238/sufefd.1068674

Cited By: 6

Öz

Gas sensing properties of metal oxide semiconductors draw high attention due to their simple fabricating methods, and low cost, chemical, and physical properties. In general, a high bandgap (>2 eV) can cause them to react in the UV region through the electromagnetic spectrum. Controlling the UV-photodetection and gas sensing ability of MoO2-MoO3 thin film through tungsten (W) doping of different ratios have been reported here. The preparation of these films was grown using a reactive magnetron sputtering system with different power sputtering of W-content. The bandgap calculations showed that the samples have a wide bandgap value. A small particle size of 8nm was observed through high W doping concentration which enhanced these materials toward high efficient gas sensing and UV photodetector applications. The UV optical sensor exhibits a high responsivity value of 2500A/W and an external quantum efficiency (EQE) value of 5x109 at 365nm. Also, an increase in the photocurrent gain value with increasing the W amount with a maximum value of 0.13, while a photocurrent of 1mA was observed. On the other hand, a fast-response/recovery time-based CO2 gas sensor of less than 10 sec was observed. The thin-film sensors showed well-defined adsorption and desorption kinetics in a CO2 environment with a p-type chemisorption behavior.

Anahtar Kelimeler

Photodetector, Gas sensor, Thin-film, Metal oxide, Semiconductor, Nanostructure

MoO2-MoO3 Nanoyapılı İnce Filmlerin W-Doping Yoluyla Faz Modülasyonu; UV Foto ve Gaz Algılama Uygulamalarını Kullanma

Öz

Metal oksit yarı iletkenlerin gaz algılama özellikleri, basit üretim yöntemleri ve düşük maliyeti, kimyasal ve fiziksel özellikleri nedeniyle büyük ilgi görmektedir. Genel olarak, yüksek bir bant aralığı (>2 eV), elektromanyetik spektrum yoluyla UV bölgesinde reaksiyona girmelerine neden olabilir. Farklı oranlarda tungsten (W) dopingi yoluyla MoO2-MoO3 ince filmin UV foto algılama ve gaz algılama yeteneğinin kontrol edilmesi burada rapor edilmiştir. Bu filmlerin hazırlanması, W içeriğinin farklı güç püskürtmeli reaktif magnetron püskürtme sistemi kullanılarak büyütüldü. Bant aralığı hesaplamaları, örneklerin geniş bir bant aralığı değerine sahip olduğunu göstermiştir. Bu malzemeleri yüksek verimli gaz algılama ve UV fotodetektör uygulamalarına doğru geliştiren yüksek W katkı konsantrasyonu yoluyla 8 nm'lik küçük bir parçacık boyutu gözlemlendi. UV optik sensör, 365nm'de 2500A/W'lik yüksek bir duyarlılık değeri ve 5x109'luk bir harici kuantum verimliliği (EQE) değeri sergiler. Ayrıca, 1mA'lık bir fotoakım olurken, maksimum 0.13 değerinde W miktarı arttıkça fotoakım kazanç değerinde bir artış gözlemlendi. Öte yandan, 10 saniyeden kısa bir hızlı yanıt/kurtarma süresine dayalı CO2 gaz sensörü gözlendi. İnce film sensörleri, p-tipi kimyasal adsorpsiyon davranışına sahip bir CO2 ortamında iyi tanımlanmış adsorpsiyon ve desorpsiyon kinetiği gösterdi.

Anahtar Kelimeler

Fotodedektör, Gaz sensörü, İnce tabaka, Metal oksit, Yarı iletken, Nanoyapı

Kaynakça

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