Araştırma Makalesi
BibTex RIS Kaynak Göster
Yıl 2023, , 72 - 77, 27.09.2023
https://doi.org/10.46810/tdfd.1294107

Öz

Kaynakça

  • [1] İ. Orak, “The performances photodiode and diode of ZnO thin film by atomic layer deposition technique,” Solid State Communications, vol. 247, pp. 17–22, 2016.
  • [2] Y. Alivov, P. Xuan, and Z. Y. Fan, “TiO 2 nanotube height effect on the efficiency of dye-sensitized solar cells,” 2011, doi: 10.1007/s11051-011-0627-1.
  • [3] N. Kılınç, E. Şennik, M. Işık, A. Ş. Ahsen, O. Öztürk, and Z. Z. Öztürk, “Fabrication and gas sensing properties of C-doped and un-doped TiO2 nanotubes,” Ceramics International, vol. 40, no. 1, Part A, pp. 109–115, 2014, doi: https://doi.org/10.1016/j.ceramint.2013.05.110.
  • [4] M. Szkoda, K. Siuzdak, A. Lisowska-Oleksiak, J. Karczewski, and J. Ryl, “Facile preparation of extremely photoactive boron-doped TiO2 nanotubes arrays,” Electrochemistry Communications, vol. 60, pp. 212–215, 2015.
  • [5] M. Yilmaz, B. B. Cirak, S. Aydogan, M. L. Grilli, and M. Biber, “Facile electrochemical-assisted synthesis of TiO2 nanotubes and their role in Schottky barrier diode applications,” Superlattices and Microstructures, vol. 113, pp. 310–318, 2018.
  • [6] J. Cai, X. Chen, R. Hong, W. Yang, and Z. Wu, “High-performance 4H-SiC-based pin ultraviolet photodiode and investigation of its capacitance characteristics,” Optics Communications, vol. 333, pp. 182–186, 2014.
  • [7] K. F. Brennan, J. Haralson II, J. W. Parks Jr, and A. Salem, “Review of reliability issues of metal-semiconductor-metal and avalanche photodiode photonic detectors,” Microelectronics Reliability, vol. 39, no. 12, pp. 1873–1883, 1999.
  • [8] A. Karabulut, İ. Orak, and A. Türüt, “The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes,” Solid-State Electronics, vol. 144, pp. 39–48, 2018.
  • [9] S. B. K. Aydin, D. E. Yildiz, H. K. Çavuş, and R. Şahingöz, “ALD TiO 2 thin film as dielectric for Al/p-Si Schottky diode,” Bulletin of Materials Science, vol. 37, pp. 1563–1568, 2014.
  • [10] W.-Q. Wu et al., “Hydrothermal fabrication of hierarchically anatase TiO2 nanowire arrays on FTO glass for dye-sensitized solar cells,” Scientific reports, vol. 3, no. 1, pp. 1–7, 2013.
  • [11] J. Maçaira, L. Andrade, and A. Mendes, “Review on nanostructured photoelectrodes for next generation dye-sensitized solar cells,” Renewable and Sustainable Energy Reviews, vol. 27, pp. 334–349, 2013.
  • [12] X. Hou, K. Aitola, and P. D. Lund, “TiO2 nanotubes for dye‐sensitized solar cells—A review,” Energy Science & Engineering, vol. 9, no. 7, pp. 921–937, 2021.
  • [13] G. K. Mor, O. K. Varghese, M. Paulose, K. Shankar, and C. A. Grimes, “A review on highly ordered, vertically oriented TiO2 nanotube arrays: Fabrication, material properties, and solar energy applications,” Solar Energy Materials and Solar Cells, vol. 90, no. 14, pp. 2011–2075, 2006.
  • [14] J. Liu and F. Chen, “Plasmon enhanced photoelectrochemical activity of Ag–Cu nanoparticles on TiO2/Ti substrates,” Int. J. Electrochem. Sci, vol. 7, no. 9560, p. e9572, 2012.
  • [15] Y. Ling, F. Ren, and J. Feng, “Reverse bias voltage dependent hydrogen sensing properties on Au–TiO2 nanotubes Schottky barrier diodes,” International Journal of Hydrogen Energy, vol. 41, no. 18, pp. 7691–7698, 2016, doi: https://doi.org/10.1016/j.ijhydene.2016.02.007.
  • [16] H. Kwon, J. H. Sung, Y. Lee, M.-H. Jo, and J. K. Kim, “Wavelength-dependent visible light response in vertically aligned nanohelical TiO2-based Schottky diodes,” Applied Physics Letters, vol. 112, no. 4, p. 43106, 2018.
  • [17] [17] S. Mao et al., “High performance hydrogen sensor based on Pd/TiO2 composite film,” International Journal of Hydrogen Energy, vol. 43, no. 50, pp. 22727–22732, 2018.
  • [18] J. M. Macak, L. V Taveira, H. Tsuchiya, K. Sirotna, J. Macak, and P. Schmuki, “Influence of different fluoride containing electrolytes on the formation of self-organized titania nanotubes by Ti anodization,” Journal of electroceramics, vol. 16, no. 1, pp. 29–34, 2006.
  • [19] L. Özcan, T. Mutlu, and S. Yurdakal, “Photoelectrocatalytic degradation of paraquat by Pt loaded TiO2 nanotubes on Ti anodes,” Materials, vol. 11, no. 9, p. 1715, 2018.
  • [20] X. Xiao, T. Tian, R. Liu, and H. She, “Influence of titania nanotube arrays on biomimetic deposition apatite on titanium by alkali treatment,” Materials Chemistry and Physics, vol. 106, no. 1, pp. 27–32, 2007, doi: https://doi.org/10.1016/j.matchemphys.2007.05.014.
  • [21] R. Narayanan, T. Y. Kwon, and K. H. Kim, “TiO2 nanotubes from stirred glycerol/NH4F electrolyte: Roughness, wetting behavior and adhesion for implant applications,” Materials Chemistry and Physics, vol. 117, no. 2–3, pp. 460–464, 2009, doi: 10.1016/j.matchemphys.2009.06.023.
  • [22] J. M. Macak et al., “TiO2 nanotubes: Self-organized electrochemical formation, properties and applications,” Current Opinion in Solid State and Materials Science, vol. 11, no. 1–2, pp. 3–18, 2007, doi: 10.1016/j.cossms.2007.08.004.
  • [23] E. Isik, L. B. Tasyurek, I. Isik, and N. Kilinc, “Synthesis and analysis of TiO2 nanotubes by electrochemical anodization and machine learning method for hydrogen sensors,” Microelectronic Engineering, vol. 262, p. 111834, 2022, doi: https://doi.org/10.1016/j.mee.2022.111834.
  • [24] R. T. Tung, “Recent advances in Schottky barrier concepts,” Materials Science and Engineering: R: Reports, vol. 35, no. 1–3, pp. 1–138, 2001.
  • [25] A. Turut, D. E. Yıldız, A. Karabulut, and İ. Orak, “Electrical characteristics of atomic layer deposited Au/Ti/HfO 2/n-GaAs MIS diodes in the wide temperature range,” Journal of Materials Science: Materials in Electronics, pp. 1–11, 2020.
  • [26] S. M. Sze, Semiconductor devices: physics and technology. John wiley & sons, 2008.
  • [27] G. Rawat, H. Kumar, Y. Kumar, C. Kumar, D. Somvanshi, and S. Jit, “Effective Richardson constant of sol-gel derived TiO 2 Films in n-TiO 2/p-Si heterojunctions,” IEEE Electron Device Letters, vol. 38, no. 5, pp. 633–636, 2017.
  • [28] D.-N. Bui, J. Mu, L. Wang, S.-Z. Kang, and X. Li, “Preparation of Cu-loaded SrTiO3 nanoparticles and their photocatalytic activity for hydrogen evolution from methanol aqueous solution,” Applied surface science, vol. 274, pp. 328–333, 2013.
  • [29] Z. Çaldıran and L. B. Taşyürek, “The role of molybdenum trioxide in the change of electrical properties of Cr/MoO3/n-Si heterojunction and electrical characterization of this device depending on temperature,” Sensors and Actuators A: Physical, p. 112765, 2021.
  • [30] A. R. Deniz, Z. Çaldıran, Ö. Metin, K. Meral, and Ş. Aydoğan, “The investigation of the electrical properties of Fe3O4/n-Si heterojunctions in a wide temperature range,” Journal of colloid and interface science, vol. 473, pp. 172–181, 2016.
  • [31] S. K. Cheung and N. W. Cheung, “Extraction of Schottky diode parameters from forward current‐voltage characteristics,” Applied Physics Letters, vol. 49, no. 2, pp. 85–87, 1986.
  • [32] R. K. Gupta, K. Ghosh, and P. K. Kahol, “Fabrication and electrical characterization of Au/p-Si/STO/Au contact,” Current Applied Physics, vol. 9, no. 5, pp. 933–936, 2009.
  • [33] A. TÜRÜT, “On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts,” Turkish Journal of Physics, vol. 44, no. 4, pp. 302–347, 2020.
  • [34] H. Norde, “A modified forward I‐V plot for Schottky diodes with high series resistance,” Journal of Applied Physics, vol. 50, no. 7, pp. 5052–5053, 1979.
  • [35] A. Kocyigit, I. Orak, Z. Çaldıran, and A. Turut, “Current–voltage characteristics of Au/ZnO/n-Si device in a wide range temperature,” Journal of Materials Science: Materials in Electronics, vol. 28, no. 22, pp. 17177–17184, 2017.
  • [36] A. Karabulut, A. Sarilmaz, F. Ozel, İ. Orak, and M. A. Şahinkaya, “A novel device fabricated with Cu2NiSnS4chalcogenide: Morphological and temperature-dependent electrical characterizations,” Current Applied Physics, vol. 20, no. 1, pp. 58–64, 2020, doi: https://doi.org/10.1016/j.cap.2019.10.011.
  • [37]Y. S. Ocak, C. Bozkaplan, H. S. Ahmed, A. Tombak, M. F. Genisel, and S. Asubay, “Temperature dependent electrical characterization of RF sputtered MoS2/n-Si heterojunction,” Optik, vol. 142, pp. 644–650, 2017.
  • [38] A. Gencer Imer et al., “Interface controlling study of silicon based Schottky diode by organic layer,” Journal of Materials Science: Materials in Electronics, vol. 30, pp. 19239–19246, 2019.
  • [39] E. Aldırmaz et al., “Cu-Al-Mn shape memory alloy based Schottky diode formed on Si,” Physica B: Condensed Matter, vol. 560, pp. 261–266, 2019.
  • [40] A. A. M. Farag, H. S. Soliman, and A. A. Atta, “Analysis of dark and photovoltaic characteristics of Au/Pyronine G (Y)/p-Si/Al heterojunction,” Synthetic metals, vol. 161, no. 23–24, pp. 2759–2764, 2012.
  • [41] A. G. Al-Sehemi, A. Karabulut, A. Dere, A. A. Al-Ghamdi, and F. Yakuphanoglu, “Photodiode performance and infrared light sensing capabilities of quaternary Cu2ZnSnS4 chalcogenide,” Surfaces and Interfaces, vol. 29, p. 101802, 2022, doi: https://doi.org/10.1016/j.surfin.2022.101802.
  • [42] E. Özcan et al., “Fabrication of hybrid photodiode systems: BODIPY decorated cyclotriphosphazene covalently grafted graphene oxides,” Inorganic Chemistry Frontiers, vol. 7, no. 16, pp. 2920–2931, 2020.

Synthesis of TiO2 Nanotubes and Photodiode Performance

Yıl 2023, , 72 - 77, 27.09.2023
https://doi.org/10.46810/tdfd.1294107

Öz

In this study, titanium dioxide (TiO2) nanotubes were produced by anodization method using glycerol-based electrolyte. Structural characterization was investigated with SEM images and XRD pattern. The rectifying properties of n-type semiconductor TiO2 nanotubes were investigated. Current-voltage (I-V) measurements of the Pt/TiO2 nanotubes/Ti device were made at room temperature, in the dark and under different illumination conditions. The basic diode parameters were calculated by using thermionic emission (TE), Cheung and Norde functions from the I-V measurements of the devices in dark conditions. The ideality factors and barrier height of the Pt/TiO2 nanotubes/Ti device were calculated 1.25 and 0.91 eV, respectively by the TE method. According to the results obtained, the Pt/TiO2 nanotubes contact has a rectifying feature. In addition, the photovoltaic properties of the devices were examined by making I-V measurements at illumination intensities between 30 and 100 mW/cm2. As a result, it has been evaluated that the device can also be used as a photodiode.

Kaynakça

  • [1] İ. Orak, “The performances photodiode and diode of ZnO thin film by atomic layer deposition technique,” Solid State Communications, vol. 247, pp. 17–22, 2016.
  • [2] Y. Alivov, P. Xuan, and Z. Y. Fan, “TiO 2 nanotube height effect on the efficiency of dye-sensitized solar cells,” 2011, doi: 10.1007/s11051-011-0627-1.
  • [3] N. Kılınç, E. Şennik, M. Işık, A. Ş. Ahsen, O. Öztürk, and Z. Z. Öztürk, “Fabrication and gas sensing properties of C-doped and un-doped TiO2 nanotubes,” Ceramics International, vol. 40, no. 1, Part A, pp. 109–115, 2014, doi: https://doi.org/10.1016/j.ceramint.2013.05.110.
  • [4] M. Szkoda, K. Siuzdak, A. Lisowska-Oleksiak, J. Karczewski, and J. Ryl, “Facile preparation of extremely photoactive boron-doped TiO2 nanotubes arrays,” Electrochemistry Communications, vol. 60, pp. 212–215, 2015.
  • [5] M. Yilmaz, B. B. Cirak, S. Aydogan, M. L. Grilli, and M. Biber, “Facile electrochemical-assisted synthesis of TiO2 nanotubes and their role in Schottky barrier diode applications,” Superlattices and Microstructures, vol. 113, pp. 310–318, 2018.
  • [6] J. Cai, X. Chen, R. Hong, W. Yang, and Z. Wu, “High-performance 4H-SiC-based pin ultraviolet photodiode and investigation of its capacitance characteristics,” Optics Communications, vol. 333, pp. 182–186, 2014.
  • [7] K. F. Brennan, J. Haralson II, J. W. Parks Jr, and A. Salem, “Review of reliability issues of metal-semiconductor-metal and avalanche photodiode photonic detectors,” Microelectronics Reliability, vol. 39, no. 12, pp. 1873–1883, 1999.
  • [8] A. Karabulut, İ. Orak, and A. Türüt, “The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes,” Solid-State Electronics, vol. 144, pp. 39–48, 2018.
  • [9] S. B. K. Aydin, D. E. Yildiz, H. K. Çavuş, and R. Şahingöz, “ALD TiO 2 thin film as dielectric for Al/p-Si Schottky diode,” Bulletin of Materials Science, vol. 37, pp. 1563–1568, 2014.
  • [10] W.-Q. Wu et al., “Hydrothermal fabrication of hierarchically anatase TiO2 nanowire arrays on FTO glass for dye-sensitized solar cells,” Scientific reports, vol. 3, no. 1, pp. 1–7, 2013.
  • [11] J. Maçaira, L. Andrade, and A. Mendes, “Review on nanostructured photoelectrodes for next generation dye-sensitized solar cells,” Renewable and Sustainable Energy Reviews, vol. 27, pp. 334–349, 2013.
  • [12] X. Hou, K. Aitola, and P. D. Lund, “TiO2 nanotubes for dye‐sensitized solar cells—A review,” Energy Science & Engineering, vol. 9, no. 7, pp. 921–937, 2021.
  • [13] G. K. Mor, O. K. Varghese, M. Paulose, K. Shankar, and C. A. Grimes, “A review on highly ordered, vertically oriented TiO2 nanotube arrays: Fabrication, material properties, and solar energy applications,” Solar Energy Materials and Solar Cells, vol. 90, no. 14, pp. 2011–2075, 2006.
  • [14] J. Liu and F. Chen, “Plasmon enhanced photoelectrochemical activity of Ag–Cu nanoparticles on TiO2/Ti substrates,” Int. J. Electrochem. Sci, vol. 7, no. 9560, p. e9572, 2012.
  • [15] Y. Ling, F. Ren, and J. Feng, “Reverse bias voltage dependent hydrogen sensing properties on Au–TiO2 nanotubes Schottky barrier diodes,” International Journal of Hydrogen Energy, vol. 41, no. 18, pp. 7691–7698, 2016, doi: https://doi.org/10.1016/j.ijhydene.2016.02.007.
  • [16] H. Kwon, J. H. Sung, Y. Lee, M.-H. Jo, and J. K. Kim, “Wavelength-dependent visible light response in vertically aligned nanohelical TiO2-based Schottky diodes,” Applied Physics Letters, vol. 112, no. 4, p. 43106, 2018.
  • [17] [17] S. Mao et al., “High performance hydrogen sensor based on Pd/TiO2 composite film,” International Journal of Hydrogen Energy, vol. 43, no. 50, pp. 22727–22732, 2018.
  • [18] J. M. Macak, L. V Taveira, H. Tsuchiya, K. Sirotna, J. Macak, and P. Schmuki, “Influence of different fluoride containing electrolytes on the formation of self-organized titania nanotubes by Ti anodization,” Journal of electroceramics, vol. 16, no. 1, pp. 29–34, 2006.
  • [19] L. Özcan, T. Mutlu, and S. Yurdakal, “Photoelectrocatalytic degradation of paraquat by Pt loaded TiO2 nanotubes on Ti anodes,” Materials, vol. 11, no. 9, p. 1715, 2018.
  • [20] X. Xiao, T. Tian, R. Liu, and H. She, “Influence of titania nanotube arrays on biomimetic deposition apatite on titanium by alkali treatment,” Materials Chemistry and Physics, vol. 106, no. 1, pp. 27–32, 2007, doi: https://doi.org/10.1016/j.matchemphys.2007.05.014.
  • [21] R. Narayanan, T. Y. Kwon, and K. H. Kim, “TiO2 nanotubes from stirred glycerol/NH4F electrolyte: Roughness, wetting behavior and adhesion for implant applications,” Materials Chemistry and Physics, vol. 117, no. 2–3, pp. 460–464, 2009, doi: 10.1016/j.matchemphys.2009.06.023.
  • [22] J. M. Macak et al., “TiO2 nanotubes: Self-organized electrochemical formation, properties and applications,” Current Opinion in Solid State and Materials Science, vol. 11, no. 1–2, pp. 3–18, 2007, doi: 10.1016/j.cossms.2007.08.004.
  • [23] E. Isik, L. B. Tasyurek, I. Isik, and N. Kilinc, “Synthesis and analysis of TiO2 nanotubes by electrochemical anodization and machine learning method for hydrogen sensors,” Microelectronic Engineering, vol. 262, p. 111834, 2022, doi: https://doi.org/10.1016/j.mee.2022.111834.
  • [24] R. T. Tung, “Recent advances in Schottky barrier concepts,” Materials Science and Engineering: R: Reports, vol. 35, no. 1–3, pp. 1–138, 2001.
  • [25] A. Turut, D. E. Yıldız, A. Karabulut, and İ. Orak, “Electrical characteristics of atomic layer deposited Au/Ti/HfO 2/n-GaAs MIS diodes in the wide temperature range,” Journal of Materials Science: Materials in Electronics, pp. 1–11, 2020.
  • [26] S. M. Sze, Semiconductor devices: physics and technology. John wiley & sons, 2008.
  • [27] G. Rawat, H. Kumar, Y. Kumar, C. Kumar, D. Somvanshi, and S. Jit, “Effective Richardson constant of sol-gel derived TiO 2 Films in n-TiO 2/p-Si heterojunctions,” IEEE Electron Device Letters, vol. 38, no. 5, pp. 633–636, 2017.
  • [28] D.-N. Bui, J. Mu, L. Wang, S.-Z. Kang, and X. Li, “Preparation of Cu-loaded SrTiO3 nanoparticles and their photocatalytic activity for hydrogen evolution from methanol aqueous solution,” Applied surface science, vol. 274, pp. 328–333, 2013.
  • [29] Z. Çaldıran and L. B. Taşyürek, “The role of molybdenum trioxide in the change of electrical properties of Cr/MoO3/n-Si heterojunction and electrical characterization of this device depending on temperature,” Sensors and Actuators A: Physical, p. 112765, 2021.
  • [30] A. R. Deniz, Z. Çaldıran, Ö. Metin, K. Meral, and Ş. Aydoğan, “The investigation of the electrical properties of Fe3O4/n-Si heterojunctions in a wide temperature range,” Journal of colloid and interface science, vol. 473, pp. 172–181, 2016.
  • [31] S. K. Cheung and N. W. Cheung, “Extraction of Schottky diode parameters from forward current‐voltage characteristics,” Applied Physics Letters, vol. 49, no. 2, pp. 85–87, 1986.
  • [32] R. K. Gupta, K. Ghosh, and P. K. Kahol, “Fabrication and electrical characterization of Au/p-Si/STO/Au contact,” Current Applied Physics, vol. 9, no. 5, pp. 933–936, 2009.
  • [33] A. TÜRÜT, “On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts,” Turkish Journal of Physics, vol. 44, no. 4, pp. 302–347, 2020.
  • [34] H. Norde, “A modified forward I‐V plot for Schottky diodes with high series resistance,” Journal of Applied Physics, vol. 50, no. 7, pp. 5052–5053, 1979.
  • [35] A. Kocyigit, I. Orak, Z. Çaldıran, and A. Turut, “Current–voltage characteristics of Au/ZnO/n-Si device in a wide range temperature,” Journal of Materials Science: Materials in Electronics, vol. 28, no. 22, pp. 17177–17184, 2017.
  • [36] A. Karabulut, A. Sarilmaz, F. Ozel, İ. Orak, and M. A. Şahinkaya, “A novel device fabricated with Cu2NiSnS4chalcogenide: Morphological and temperature-dependent electrical characterizations,” Current Applied Physics, vol. 20, no. 1, pp. 58–64, 2020, doi: https://doi.org/10.1016/j.cap.2019.10.011.
  • [37]Y. S. Ocak, C. Bozkaplan, H. S. Ahmed, A. Tombak, M. F. Genisel, and S. Asubay, “Temperature dependent electrical characterization of RF sputtered MoS2/n-Si heterojunction,” Optik, vol. 142, pp. 644–650, 2017.
  • [38] A. Gencer Imer et al., “Interface controlling study of silicon based Schottky diode by organic layer,” Journal of Materials Science: Materials in Electronics, vol. 30, pp. 19239–19246, 2019.
  • [39] E. Aldırmaz et al., “Cu-Al-Mn shape memory alloy based Schottky diode formed on Si,” Physica B: Condensed Matter, vol. 560, pp. 261–266, 2019.
  • [40] A. A. M. Farag, H. S. Soliman, and A. A. Atta, “Analysis of dark and photovoltaic characteristics of Au/Pyronine G (Y)/p-Si/Al heterojunction,” Synthetic metals, vol. 161, no. 23–24, pp. 2759–2764, 2012.
  • [41] A. G. Al-Sehemi, A. Karabulut, A. Dere, A. A. Al-Ghamdi, and F. Yakuphanoglu, “Photodiode performance and infrared light sensing capabilities of quaternary Cu2ZnSnS4 chalcogenide,” Surfaces and Interfaces, vol. 29, p. 101802, 2022, doi: https://doi.org/10.1016/j.surfin.2022.101802.
  • [42] E. Özcan et al., “Fabrication of hybrid photodiode systems: BODIPY decorated cyclotriphosphazene covalently grafted graphene oxides,” Inorganic Chemistry Frontiers, vol. 7, no. 16, pp. 2920–2931, 2020.
Toplam 42 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Bölüm Makaleler
Yazarlar

Lütfi Bilal Taşyürek 0000-0003-0607-648X

Erken Görünüm Tarihi 27 Eylül 2023
Yayımlanma Tarihi 27 Eylül 2023
Yayımlandığı Sayı Yıl 2023

Kaynak Göster

APA Taşyürek, L. B. (2023). Synthesis of TiO2 Nanotubes and Photodiode Performance. Türk Doğa Ve Fen Dergisi, 12(3), 72-77. https://doi.org/10.46810/tdfd.1294107
AMA Taşyürek LB. Synthesis of TiO2 Nanotubes and Photodiode Performance. TDFD. Eylül 2023;12(3):72-77. doi:10.46810/tdfd.1294107
Chicago Taşyürek, Lütfi Bilal. “Synthesis of TiO2 Nanotubes and Photodiode Performance”. Türk Doğa Ve Fen Dergisi 12, sy. 3 (Eylül 2023): 72-77. https://doi.org/10.46810/tdfd.1294107.
EndNote Taşyürek LB (01 Eylül 2023) Synthesis of TiO2 Nanotubes and Photodiode Performance. Türk Doğa ve Fen Dergisi 12 3 72–77.
IEEE L. B. Taşyürek, “Synthesis of TiO2 Nanotubes and Photodiode Performance”, TDFD, c. 12, sy. 3, ss. 72–77, 2023, doi: 10.46810/tdfd.1294107.
ISNAD Taşyürek, Lütfi Bilal. “Synthesis of TiO2 Nanotubes and Photodiode Performance”. Türk Doğa ve Fen Dergisi 12/3 (Eylül 2023), 72-77. https://doi.org/10.46810/tdfd.1294107.
JAMA Taşyürek LB. Synthesis of TiO2 Nanotubes and Photodiode Performance. TDFD. 2023;12:72–77.
MLA Taşyürek, Lütfi Bilal. “Synthesis of TiO2 Nanotubes and Photodiode Performance”. Türk Doğa Ve Fen Dergisi, c. 12, sy. 3, 2023, ss. 72-77, doi:10.46810/tdfd.1294107.
Vancouver Taşyürek LB. Synthesis of TiO2 Nanotubes and Photodiode Performance. TDFD. 2023;12(3):72-7.