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Ag/Azure A /n-Si Schottky Diyodun elektriksel ve fotovoltaik özelliklerinin araştırılması

Yıl 2017, Cilt: 6 Sayı: 1, 1 - 6, 05.10.2017

Öz



Bu çalışmada; Ag/Azure
A/n-Si/Al Schottky diyodların
oda
sıcaklığında karanlıkta ve solar simülatörde elektriksel ve fotovoltaik
özellikleri araştırıldı. Hesaplamaların sonucunda karanlıkta idealite faktörü
ve engel yüksekliği I-V ölçümlerinden 1,79, 0,79 eV olarak elde edildi.
Fotovoltaik parametreler 100 mW/cm2 ışınım altında Voc =162 mV, Isc = 1,47 10-6 µA, fill faktörü
(FF) % 30 ve verim (
η) % 4,09
olarak hesaplanmıştır. Sonuçlardan görüleceği üzere imal edilen diyodun
fotovoltaik özelliği olmakla beraber verimleri düşük çıkmıştır. Ayrıca I-V
ölçümlerinden elde edilen sonuçlara bakıldığında diyodun iyi bir doğrultma
özelliğine sahip olduğu söylenebilir.

Kaynakça

  • [1] Sze S.M., Physics of semiconductor devices, 2nd ed. New York Wiley. 1981.
  • [2] Rhoderick E.H. and William, R.H., Metal-Semiconductor Contacts, 2nd ed. Clarendon, Oxford. 1988.
  • [3] Yakuphanoglu F., Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye, J. Alloys Comp. 494 (2), 451–455, 2010.
  • [4] Gokcen M., Alli A., Investigation of electrical and photovoltaic properties of Au/poly(propylene glycol)-b-polystyrene/n-Si diode at various illumination intensities, Philosophical Magazine, 94 (9), 925-932, 2014.
  • [5] Orak I., Turut A. And Toprak M., The comparison of electrical characterizations and photovoltaic performance of Al/p-Si and Al/azure C/p-Si junctions devices, Synthetic Metals, 200, 66-73, 2015.
  • [6] Ozaydin C., Akkilic K., Ilhan S., Ruzgar S., Gullu O., Temel H., Characterization of an Au/n-Si photovoltaic structure with an organic thin film, Materials Science in Semiconductor Processing, 16 (4), 1125-1130, 2013.
  • [7] Çetinkaya H.G., Tecimer H., Uslu H., Altindal S., Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures, Curr. Appl. Phys., 13, 1150-1156, 2013.
  • [8] Kılıcoglu T., Aydın M. E. and Ocak Y. S., The determination of the interface state density distribution of the Al/methyl red/p-Si Schottky barrier diode by using a capacitance method, Phy. B. Cond. Matter 388 (1), 244–248, 2007.
  • [9] Oyama N., Takanashi Y., Kaneko S., Momiyama K., Suzuki K. and Hirose F., Pentacene/n−-Si heterojunction diodes and photovoltaic devices investigated by I–V and C–V measurements, Micro. Eng., 88 (9), 2959–2963, 2011.
  • [10] Ocak Y.S., Ebeoglu M. A., Topal G. and Kılıcoglu T., Temperature dependent electrical characteristics of an organic–inorganic heterojunction obtained from a novel organometal Mn complex, Physica B, 405, 2329-2333, 2010.
  • [11] Çaldıran Z., Deniz A. R., Aydogan Ş., Yesildag A. and Ekinci D., The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n-Si, Superlattices and Microstructures. 56 45–54, 2013.
  • [12] Orak İ., Toprak M. and Turut A., Illumination impact on the electrical characterizations of an Al/Azure A/p-Si heterojunction, Physica Scripta 89, 115810-5, 2014.
  • [13] Aydoğan Ş., Sağlam M. and Türüt A., On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature, Appl. Surf. Sci., 250 (1), 43-49, 2005.
  • [14] Yakuphanoglu F., Ocak Y. S., Kılıcoglu T. and Farooq W. A., Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye, Micro. Eng. 88, 2951–2944, 2011.
  • [15] Kern W., Overview and evolution of silicon wafer cleaning technology Handbook of Silicon Wafer Cleaning Technology), 2, 2008.
  • [16] Altindal S., Tunc T., Tecimer H., Yucedag I., Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250 W illumination level, Materials Science in Semiconductor Processing, 28, 48-53, 2014.
  • [17] Tatar B., Demiroglu D., Urgen M., Structure and photovoltaic properties of Ag/p-CuPc/a-Si/c-Si/Ag organic-inorganic hybrid heterojunction fabricated by chemical spray pyrolysis technique, Microelectronic Engineering, 108, 150-157, 2013.
  • [18] Norde H., A modified forward I-V plot for Schottky diodes with high series resistance, Journal of Applied Physics, 50, 5052, 1979.
  • [19] Bohlin K. E., Generalized Norde plot including determination of the ideality factor, Journal of Applied Physics, 60 (3), 1223, 1986.
  • [20] McLeon A.B., Limitations to the Norde I-V plot, Semicond. Sci. Tech., 1,177-179, 1986.
  • [21] ZAFER C., Organik Boya Esaslı Nanokristal Yapılı İnce Film Güneş Pili Üretimi, Ege Üniversitesi Fen Bilimleri Enstitüsü, Doktora Tezi. 2006.
  • [22] Orak I., Kocyigit A., Turut A., The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique, Journal of Alloys and Compounds, 691, 873-879, 2017.
  • [23] Gokcen, M., Illumination Effects on Electrical Characteristics of Au/Bi4Ti3O12/n-Si Structures, Journal of Nanoelectronics and Optoelectronics, 10 (3), 309-313, 2015.
  • [24] Gullu O. and Turut A., Photovoltaic and electronic properties of quercetin/p-InP solar cells, Sol. Ener. Mater. Sol. Cell, 92 (10), 1205–1210, 2008.

Yıl 2017, Cilt: 6 Sayı: 1, 1 - 6, 05.10.2017

Öz

Kaynakça

  • [1] Sze S.M., Physics of semiconductor devices, 2nd ed. New York Wiley. 1981.
  • [2] Rhoderick E.H. and William, R.H., Metal-Semiconductor Contacts, 2nd ed. Clarendon, Oxford. 1988.
  • [3] Yakuphanoglu F., Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye, J. Alloys Comp. 494 (2), 451–455, 2010.
  • [4] Gokcen M., Alli A., Investigation of electrical and photovoltaic properties of Au/poly(propylene glycol)-b-polystyrene/n-Si diode at various illumination intensities, Philosophical Magazine, 94 (9), 925-932, 2014.
  • [5] Orak I., Turut A. And Toprak M., The comparison of electrical characterizations and photovoltaic performance of Al/p-Si and Al/azure C/p-Si junctions devices, Synthetic Metals, 200, 66-73, 2015.
  • [6] Ozaydin C., Akkilic K., Ilhan S., Ruzgar S., Gullu O., Temel H., Characterization of an Au/n-Si photovoltaic structure with an organic thin film, Materials Science in Semiconductor Processing, 16 (4), 1125-1130, 2013.
  • [7] Çetinkaya H.G., Tecimer H., Uslu H., Altindal S., Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures, Curr. Appl. Phys., 13, 1150-1156, 2013.
  • [8] Kılıcoglu T., Aydın M. E. and Ocak Y. S., The determination of the interface state density distribution of the Al/methyl red/p-Si Schottky barrier diode by using a capacitance method, Phy. B. Cond. Matter 388 (1), 244–248, 2007.
  • [9] Oyama N., Takanashi Y., Kaneko S., Momiyama K., Suzuki K. and Hirose F., Pentacene/n−-Si heterojunction diodes and photovoltaic devices investigated by I–V and C–V measurements, Micro. Eng., 88 (9), 2959–2963, 2011.
  • [10] Ocak Y.S., Ebeoglu M. A., Topal G. and Kılıcoglu T., Temperature dependent electrical characteristics of an organic–inorganic heterojunction obtained from a novel organometal Mn complex, Physica B, 405, 2329-2333, 2010.
  • [11] Çaldıran Z., Deniz A. R., Aydogan Ş., Yesildag A. and Ekinci D., The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n-Si, Superlattices and Microstructures. 56 45–54, 2013.
  • [12] Orak İ., Toprak M. and Turut A., Illumination impact on the electrical characterizations of an Al/Azure A/p-Si heterojunction, Physica Scripta 89, 115810-5, 2014.
  • [13] Aydoğan Ş., Sağlam M. and Türüt A., On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature, Appl. Surf. Sci., 250 (1), 43-49, 2005.
  • [14] Yakuphanoglu F., Ocak Y. S., Kılıcoglu T. and Farooq W. A., Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye, Micro. Eng. 88, 2951–2944, 2011.
  • [15] Kern W., Overview and evolution of silicon wafer cleaning technology Handbook of Silicon Wafer Cleaning Technology), 2, 2008.
  • [16] Altindal S., Tunc T., Tecimer H., Yucedag I., Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250 W illumination level, Materials Science in Semiconductor Processing, 28, 48-53, 2014.
  • [17] Tatar B., Demiroglu D., Urgen M., Structure and photovoltaic properties of Ag/p-CuPc/a-Si/c-Si/Ag organic-inorganic hybrid heterojunction fabricated by chemical spray pyrolysis technique, Microelectronic Engineering, 108, 150-157, 2013.
  • [18] Norde H., A modified forward I-V plot for Schottky diodes with high series resistance, Journal of Applied Physics, 50, 5052, 1979.
  • [19] Bohlin K. E., Generalized Norde plot including determination of the ideality factor, Journal of Applied Physics, 60 (3), 1223, 1986.
  • [20] McLeon A.B., Limitations to the Norde I-V plot, Semicond. Sci. Tech., 1,177-179, 1986.
  • [21] ZAFER C., Organik Boya Esaslı Nanokristal Yapılı İnce Film Güneş Pili Üretimi, Ege Üniversitesi Fen Bilimleri Enstitüsü, Doktora Tezi. 2006.
  • [22] Orak I., Kocyigit A., Turut A., The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique, Journal of Alloys and Compounds, 691, 873-879, 2017.
  • [23] Gokcen, M., Illumination Effects on Electrical Characteristics of Au/Bi4Ti3O12/n-Si Structures, Journal of Nanoelectronics and Optoelectronics, 10 (3), 309-313, 2015.
  • [24] Gullu O. and Turut A., Photovoltaic and electronic properties of quercetin/p-InP solar cells, Sol. Ener. Mater. Sol. Cell, 92 (10), 1205–1210, 2008.
Toplam 24 adet kaynakça vardır.

Ayrıntılar

Bölüm Araştırma Makalesi
Yazarlar

Nezir Yıldırım

Enes Durumlu Bu kişi benim

Yayımlanma Tarihi 5 Ekim 2017
Yayımlandığı Sayı Yıl 2017 Cilt: 6 Sayı: 1

Kaynak Göster

APA Yıldırım, N., & Durumlu, E. (2017). Ag/Azure A /n-Si Schottky Diyodun elektriksel ve fotovoltaik özelliklerinin araştırılması. Türk Doğa ve Fen Dergisi, 6(1), 1-6.
AMA Yıldırım N, Durumlu E. Ag/Azure A /n-Si Schottky Diyodun elektriksel ve fotovoltaik özelliklerinin araştırılması. TDFD. Ekim 2017;6(1):1-6.
Chicago Yıldırım, Nezir, ve Enes Durumlu. “Ag/Azure A /n-Si Schottky Diyodun elektriksel ve fotovoltaik özelliklerinin araştırılması”. Türk Doğa ve Fen Dergisi 6, sy. 1 (Ekim 2017): 1-6.
EndNote Yıldırım N, Durumlu E (01 Ekim 2017) Ag/Azure A /n-Si Schottky Diyodun elektriksel ve fotovoltaik özelliklerinin araştırılması. Türk Doğa ve Fen Dergisi 6 1 1–6.
IEEE N. Yıldırım ve E. Durumlu, “Ag/Azure A /n-Si Schottky Diyodun elektriksel ve fotovoltaik özelliklerinin araştırılması”, TDFD, c. 6, sy. 1, ss. 1–6, 2017.
ISNAD Yıldırım, Nezir - Durumlu, Enes. “Ag/Azure A /n-Si Schottky Diyodun elektriksel ve fotovoltaik özelliklerinin araştırılması”. Türk Doğa ve Fen Dergisi 6/1 (Ekim2017), 1-6.
JAMA Yıldırım N, Durumlu E. Ag/Azure A /n-Si Schottky Diyodun elektriksel ve fotovoltaik özelliklerinin araştırılması. TDFD. 2017;6:1–6.
MLA Yıldırım, Nezir ve Enes Durumlu. “Ag/Azure A /n-Si Schottky Diyodun elektriksel ve fotovoltaik özelliklerinin araştırılması”. Türk Doğa ve Fen Dergisi, c. 6, sy. 1, 2017, ss. 1-6.
Vancouver Yıldırım N, Durumlu E. Ag/Azure A /n-Si Schottky Diyodun elektriksel ve fotovoltaik özelliklerinin araştırılması. TDFD. 2017;6(1):1-6.