DC~1.6 GHZ GaAS MESFET’LERE SAHİP DAĞILMIŞ PARAMETRELİ KUVVETLENDİRİCİ

Yıl 2016, , 159 - 170, 13.10.2016

Bahadır Hiçdurmaz , Cengiz Özzaim

https://doi.org/10.17482/uujfe.81252

Öz

Bu çalışmada, DC ~ 1.6 GHz bant genişliğine sahip bir dağılmış parametreli kuvvetlendirici (DA) baskı devre kartında gerçeklenmiştir. Dağılmış parametreli kuvvetlendiricinin performans parametreleri olan saçınım (S-) parametreleri ölçülmüş ve sonuçlar benzetim sonuçlarıyla kıyaslanmıştır. Yükselticinin karakterizasyonunda, devrenin aktif elemanları olan transistörlerin bazı frekanslarda verilmiş küçük-işaret mikrodalga S-parametreleri ve pasif elemanların değerleri kullanılmıştır. Elde edilen sonuçlara göre, ölçülen ve benzetilen sonuçlar nispeten uyumludur.

Anahtar Kelimeler

Dağılmış parametreli kuvvetlendirici, Genişbant; S-parametreleri; PCB gerçekleme

A DC~1.6 Ghz Distributed Amplifier with GaAs MESFETs

Öz

In this study, a DC ~ 1.6 GHz bandwidth distributed amplifier (DA) is fabricated in printed circuit board (PCB). The scattering (S-) parameters of the distributed amplifier are measured and compared with simulated results. In characterization of the amplifier, small-signal microwave S-parameters given at some discrete frequencies of transistors are utilized. According to obtained results, it is observed that measured and simulated results are in relatively good agreement.

Anahtar Kelimeler

Distributed amplifier, broadband; S-parameters; PCB fabrication

Kaynakça

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