GÜNEŞ PİLİ UYGULAMALARI İÇİN CdTe YARIİLETKEN İNCE FİLMLERİN ELEKTRODEPOZİSYON YÖNTEMİYLE ÜRETİLMESİ

Yıl 2016, Cilt: 21 Sayı: 2, 1 - 8, 27.08.2016

Ahmet Peksöz

https://doi.org/10.17482/uujfe.46840

Cited By: 1

Öz

Elektrodepozisyon ile üretilen kadmiyum tellür (CdTe) ince filmi, oda sıcaklığında 120 saniye sürede ve -0,85 V’luk sabit bir katodik potansiyel altında ITO kaplı cam yüzeye büyütülmüştür. Depozisyon çözeltisi, kadmiyum klorür (CdCl₂), sodyum tellürit (Na₂TeO₃) ve saf sudan oluşturuldu. Depozisyon çöeltisinin pH değeri, HCl eklenerek 2,0’a ayarlandı. EDX analizi CdTe filminin %52 Cd ve %48 Te elemental bileşenlerine sahip olduğunu göstermektedir. Film kalınlığının 140 nm olduğu bulundu. CdTe ince filmi p-tipi yarıiletken davranış sergilemektedir ve 1,47 eV’luk bir enerji bant aralığına sahiptir.

Anahtar Kelimeler

Elektrodepozisyon, CdTe Yarıiletken İnce Film;Güneş Pili

Production of CdTe Semiconductor Thin Films by Electrodeposition Technique for Solar Cell Applications

Öz

Electro-deposited cadmium tellurite (CuTe) thin film was grown onto ITO-coated glass substrate for 120 seconds at the room temperature and a constant cathodic potential of -0.85 V. Deposition solution was prepared from cadmium chloride (CdCl₂), sodium tellurite (Na₂TeO₃) and pure water. The pH value of the deposition solution was adjusted to 2.0 by adding HCl. The EDX analysis shows that the film has 52% Cd and 48% Te elemental compositions. Film thickness was found to be 140 nm. The CdTe thin film exhibits p-type semiconductor character, and has an energy bandgap of 1.47 eV.

 

Anahtar Kelimeler

Electrodeposition, CdTe Semiconductor Thin Film; Solar Cell

Kaynakça

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