Araştırma Makalesi
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18 MV-Harici Demet ile RadFET Radyasyon Sensörü Performansının Değerlendirilmesi

Yıl 2019, Cilt 24, Sayı 3, 309 - 318, 31.12.2019
https://doi.org/10.17482/uumfd.558166

Öz

Lineer hızlandırıcıdan yayılan 18 MV’luk X-ışınları ile ışınlanan RadFET’lerin radyasyon cevapları, eşik voltaj kaymaları ve tuzak yoğunlukları üzerinden incelenmiştir. Işınlamadan önce ve sonra eşik voltajları ölçülerek karşılaştırılmıştır. Çeşitli teknikler kullanılarak kapı oksitinde ve oksit/silikon arayüzeyinde hesaplanan tuzak yoğunlukları değerlendirilmiştir. ΔVth – D grafiği, yaklaşık 2 Gy’e kadar mükemmel doğrusallık göstermiştir. RadFET’in radyasyon cevabı, elektrik alan perdelemesi tarafından uyarılan oksit tuzak yüklerinin artmasıyla 2 Gy sonrasında doğrusallıktan sapmaya başlamıştır. Deneysel sonuçlar, RadFET’ler için verilen fit fonksiyonuyla iyi bir uyum içindedir. Işınlama sonucunda oluşan sabit ve anahtarlama tuzakları incelenmiştir. Sabit tuzakların yoğunluğu, anahtarlama tuzaklarının yoğunluğundan önemli bir miktar daha yüksek olarak bulunmuştur. Sıfır kapı voltajı altında ölçülen eşik voltajlarından yüzde zayıflama aralığı %0.004 – %1.235 olarak hesaplanmıştır.

Kaynakça

  • Andjelkovic, M.S., Ristic, G.S. and Jaksic, A.B. (2015) Using RADFET for the real-time measurement of gamma radiation dose rate, Measurement Science and Technology, 26, 025004. doi: 10.1088/0957-0233/26/2/025004
  • Brugler, J.S. and Jespers, P.G.A. (1969) Charge pumping in MOS devices, IEEE Transactions on Electron Devices, 16, 297-302. doi: 10.1109/T-ED.1969.16744
  • Fröhlich, L., Casarin, K., Quai, E., Holmes-Siedle, A., Severgnini, M. and Vidimari, R. (2013) Online monitoring of absorbed dose in undulator magnets with RADFET dosimeters at FERMI@Elettra, Nuclear Instruments and Methods in Physics Research A, 703, 70-79. doi: 10.1016/j.nima.2012.11.021
  • Groeseneken, G., Maes, H.E., Beltran, N. and De Keersmaecker, R.F. (1984) A reliable approach to charge-pumping measurements in MOS transistors, IEEE Transactions on Electron Devices, 31, 42-53. doi: 10.1109/T-ED.1984.21472
  • Holmes-Siedle, A. and Adams, L. (1986) RADFETs: a review of use of metal/oxide/silicon devices as integrating dosimeters, Radiation Physics and Chemistry, 28, 235-244. doi: 10.1016/1359-0197(86)90134-7
  • Holmes-Siedle, A., Ravotti, F. and Glaser, M. (2007) The dosimetric performance of RadFETs in radiation test beams, IEEE Radiation Effects Data Workshop, 42-57. doi: 10.1109/REDW.2007.4342539
  • Jaksic, A., Ristic, G., Pejovic, M., Mohammadzadeh, A. and Lane, W. (2002) Characterization of radiation response of 400 nm implanted gate oxide RADFETs, 23rd International conference on microelectronics, 727-730. doi: 10.1109/MIEL.2002.1003360
  • Kahraman, A., Kaya, S., Jaksic, A. and Yilmaz, E. (2015) A comprehensive study on the photon energy response of RadFET dosimeters using the PENELOPE Monte Carlo code, Radiation Effects and Defects in Solids, 170:5, 367-376. doi: 10.1080/10420150.2015.1010167
  • Lu, L., Wang, M. and Wong, M. (2011) A new observation of the Elliot curve waveform in charge pumping of poly-Si TFTs, IEEE Electron Device Letter, 32, 506-508. doi: 10.1109/LED.2010.2104311
  • Martinez-Garcia, M.S., Torres del Rio, J., Palma, A.J., Lallena, A.M., Jaksic, A. and Carvajal, M.A. (2015) Comparative study of MOSFET response to photon and electron beams in reference conditions, Sensors and Actuators A, 225, 95-102. doi: 10.1016/j.sna.2015.02.006
  • McWhorter, P.J. and Winokur, P.S. (1986) Simple technique for separating the effects of interface traps trapped-oxide charge in metal-oxide-semiconductor transistors, Applied Physics Letters, 48, 133-135. doi: 10.1063/1.96974
  • O’Connell, B., Kelleher, A., Lane, W. and Adams, L. (1996) Stacked RADFETs for increased radiation sensitivity, IEEE Transactions on Nuclear Science, 43, 985-990. doi: 10.1109/23.510744
  • O’Connell, B., McCarthy, C., Lane, B. and Mohammadzadeh, A. (1999) Optimised stacked RADFETs for micro-gray dose measurement, Fifth European Conference on Radiation and Its Effects on Components and Systems, 101-105. doi: 10.1109/RADECS.1999.858553
  • Paulsen, R.E., White, M.H. (1994) Theory and application of charge pumping for the characterization of Si-SiO2 interface and near interface oxide traps, IEEE Transactions on Electron Devices, 41, 1213-1216. doi: 10.1109/16.293349
  • Pejovic, M.M., Pejovic, M.M. and Jaksic, A.B. (2012) Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room an elevated temperature, Sensors and Actuators A, 174, 85-90. doi: 10.1016/j.sna.2011.12.011
  • Pejovic, M.M. (2017) Process in radiation sensitive MOSFETs during irradiation and post irradiation annealing responsible for threshold voltage shift, Radiation Physics and Chemistry, 130, 221-22. doi: 10.1016/j.radphyschem.2016.08.027
  • Ristic, G., Golubovic, S. and Pejovic, M. (1996) Sensitivity and fading of pMOS dosimeters with thick gate oxide, Sensors and Actuators A, 51, 153-158. doi: 10.1016/0924-4247(95)01211-7
  • Ristic, G.S. (2009) Thermal and UV annealing of irradiated pMOS dosimetric transistors, Journal of Physics D: Applied Physics, 42, 135101. doi: 10.1088/0022-3727/42/13/135101
  • Ristic, G., Vasovic, N.D., Kovacevic, M. and Jaksic, A.B. (2011) The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si), Nuclear Instruments and Methods in Physics Research Section B, 269, 2703-2708. doi: 10.1016/j.nimb.2011.08.015
  • Ristic, G.S., Andjelkovic, M. and Jaksic, A.B. (2015) The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses, Applied Radiation and Isotopes, 102, 29-34. doi: 10.1016/j.apradiso.2015.04.009
  • Stamenkovic, Z., Vasovic, N.D. and Ristic, G.S. (2014) Automatic and reliable electrical characterization of MOSFETs, IEEE 17th International Symposium on Design and Diagnostics of Electronic Circuits & Systems. doi:10.1109/DDECS.2014.6868804
  • Vasovic, N.D. and Ristic, G. (2012) A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs, Measurement, 45, 1922-1926. doi: 10.1016/j.measurement.2012.03.011
  • Yilmaz, E., Kahraman, A., McGarrigle, A.M., Vasovic, N., Yegen, D. and Jaksic, A. (2017) Investigation of RadFET response to X-ray and electron beams, Applied Radiation and Isotopes, 127, 156-160. doi: 10.1016/j.apradiso.2017.06.004

EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM

Yıl 2019, Cilt 24, Sayı 3, 309 - 318, 31.12.2019
https://doi.org/10.17482/uumfd.558166

Öz

The radiation response of RadFET irradiated with 18 MV X-rays emitted from a linear accelerator was examined on threshold voltage shifts and trap densities. The measured threshold voltages were compared before and after irradiation. Trap densities calculated using various techniques in the gate oxide and oxide/silicon interface were interpreted. The ΔVth – D graph showed excellent linearity of up to just about 2 Gy. The RadFETs response to radiation started to deviate from linearity after 2 Gy due to increasing oxide trapped charges induced by electric field screening. The experimental outcomes are in good accordance with the fitting function given for RadFETs. Fixed and switching traps formed by irradiation were investigated. The density of the fixed traps was significantly higher than the density of the switching traps. From the threshold voltages measured under zero gate voltage in a certain time interval, the percentage fading range was calculated as 0.004-1.235%.

Kaynakça

  • Andjelkovic, M.S., Ristic, G.S. and Jaksic, A.B. (2015) Using RADFET for the real-time measurement of gamma radiation dose rate, Measurement Science and Technology, 26, 025004. doi: 10.1088/0957-0233/26/2/025004
  • Brugler, J.S. and Jespers, P.G.A. (1969) Charge pumping in MOS devices, IEEE Transactions on Electron Devices, 16, 297-302. doi: 10.1109/T-ED.1969.16744
  • Fröhlich, L., Casarin, K., Quai, E., Holmes-Siedle, A., Severgnini, M. and Vidimari, R. (2013) Online monitoring of absorbed dose in undulator magnets with RADFET dosimeters at FERMI@Elettra, Nuclear Instruments and Methods in Physics Research A, 703, 70-79. doi: 10.1016/j.nima.2012.11.021
  • Groeseneken, G., Maes, H.E., Beltran, N. and De Keersmaecker, R.F. (1984) A reliable approach to charge-pumping measurements in MOS transistors, IEEE Transactions on Electron Devices, 31, 42-53. doi: 10.1109/T-ED.1984.21472
  • Holmes-Siedle, A. and Adams, L. (1986) RADFETs: a review of use of metal/oxide/silicon devices as integrating dosimeters, Radiation Physics and Chemistry, 28, 235-244. doi: 10.1016/1359-0197(86)90134-7
  • Holmes-Siedle, A., Ravotti, F. and Glaser, M. (2007) The dosimetric performance of RadFETs in radiation test beams, IEEE Radiation Effects Data Workshop, 42-57. doi: 10.1109/REDW.2007.4342539
  • Jaksic, A., Ristic, G., Pejovic, M., Mohammadzadeh, A. and Lane, W. (2002) Characterization of radiation response of 400 nm implanted gate oxide RADFETs, 23rd International conference on microelectronics, 727-730. doi: 10.1109/MIEL.2002.1003360
  • Kahraman, A., Kaya, S., Jaksic, A. and Yilmaz, E. (2015) A comprehensive study on the photon energy response of RadFET dosimeters using the PENELOPE Monte Carlo code, Radiation Effects and Defects in Solids, 170:5, 367-376. doi: 10.1080/10420150.2015.1010167
  • Lu, L., Wang, M. and Wong, M. (2011) A new observation of the Elliot curve waveform in charge pumping of poly-Si TFTs, IEEE Electron Device Letter, 32, 506-508. doi: 10.1109/LED.2010.2104311
  • Martinez-Garcia, M.S., Torres del Rio, J., Palma, A.J., Lallena, A.M., Jaksic, A. and Carvajal, M.A. (2015) Comparative study of MOSFET response to photon and electron beams in reference conditions, Sensors and Actuators A, 225, 95-102. doi: 10.1016/j.sna.2015.02.006
  • McWhorter, P.J. and Winokur, P.S. (1986) Simple technique for separating the effects of interface traps trapped-oxide charge in metal-oxide-semiconductor transistors, Applied Physics Letters, 48, 133-135. doi: 10.1063/1.96974
  • O’Connell, B., Kelleher, A., Lane, W. and Adams, L. (1996) Stacked RADFETs for increased radiation sensitivity, IEEE Transactions on Nuclear Science, 43, 985-990. doi: 10.1109/23.510744
  • O’Connell, B., McCarthy, C., Lane, B. and Mohammadzadeh, A. (1999) Optimised stacked RADFETs for micro-gray dose measurement, Fifth European Conference on Radiation and Its Effects on Components and Systems, 101-105. doi: 10.1109/RADECS.1999.858553
  • Paulsen, R.E., White, M.H. (1994) Theory and application of charge pumping for the characterization of Si-SiO2 interface and near interface oxide traps, IEEE Transactions on Electron Devices, 41, 1213-1216. doi: 10.1109/16.293349
  • Pejovic, M.M., Pejovic, M.M. and Jaksic, A.B. (2012) Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room an elevated temperature, Sensors and Actuators A, 174, 85-90. doi: 10.1016/j.sna.2011.12.011
  • Pejovic, M.M. (2017) Process in radiation sensitive MOSFETs during irradiation and post irradiation annealing responsible for threshold voltage shift, Radiation Physics and Chemistry, 130, 221-22. doi: 10.1016/j.radphyschem.2016.08.027
  • Ristic, G., Golubovic, S. and Pejovic, M. (1996) Sensitivity and fading of pMOS dosimeters with thick gate oxide, Sensors and Actuators A, 51, 153-158. doi: 10.1016/0924-4247(95)01211-7
  • Ristic, G.S. (2009) Thermal and UV annealing of irradiated pMOS dosimetric transistors, Journal of Physics D: Applied Physics, 42, 135101. doi: 10.1088/0022-3727/42/13/135101
  • Ristic, G., Vasovic, N.D., Kovacevic, M. and Jaksic, A.B. (2011) The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si), Nuclear Instruments and Methods in Physics Research Section B, 269, 2703-2708. doi: 10.1016/j.nimb.2011.08.015
  • Ristic, G.S., Andjelkovic, M. and Jaksic, A.B. (2015) The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses, Applied Radiation and Isotopes, 102, 29-34. doi: 10.1016/j.apradiso.2015.04.009
  • Stamenkovic, Z., Vasovic, N.D. and Ristic, G.S. (2014) Automatic and reliable electrical characterization of MOSFETs, IEEE 17th International Symposium on Design and Diagnostics of Electronic Circuits & Systems. doi:10.1109/DDECS.2014.6868804
  • Vasovic, N.D. and Ristic, G. (2012) A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs, Measurement, 45, 1922-1926. doi: 10.1016/j.measurement.2012.03.011
  • Yilmaz, E., Kahraman, A., McGarrigle, A.M., Vasovic, N., Yegen, D. and Jaksic, A. (2017) Investigation of RadFET response to X-ray and electron beams, Applied Radiation and Isotopes, 127, 156-160. doi: 10.1016/j.apradiso.2017.06.004

Ayrıntılar

Birincil Dil İngilizce
Konular Mühendislik
Bölüm Araştırma Makaleleri
Yazarlar

Berk MORKOÇ Bu kişi benim
ULUDAĞ ÜNİVERSİTESİ, FEN BİLİMLERİ ENSTİTÜSÜ
0000-0002-9573-6805
Türkiye


Ayşegül KAHRAMAN> (Sorumlu Yazar)
ULUDAĞ ÜNİVERSİTESİ, FEN-EDEBİYAT FAKÜLTESİ
0000-0002-1836-7033
Türkiye


Dinçer YEĞEN>
Sağlık Bilimleri Üniversitesi Dr. A.Y. Ankara Onkoloji Eğitim ve Araştırma Hastanesi
0000-0003-3180-600X
Türkiye


Ercan YILMAZ>
NÜKLEER RADYASYON DEDEKTÖRLERİ UYGULAMA VE ARAŞTIRMA MERKEZİ
0000-0002-6652-4662
Türkiye

Yayımlanma Tarihi 31 Aralık 2019
Başvuru Tarihi 26 Nisan 2019
Kabul Tarihi 18 Kasım 2019
Yayınlandığı Sayı Yıl 2019, Cilt 24, Sayı 3

Kaynak Göster

Bibtex @araştırma makalesi { uumfd558166, journal = {Uludağ Üniversitesi Mühendislik Fakültesi Dergisi}, issn = {2148-4147}, eissn = {2148-4155}, address = {}, publisher = {Bursa Uludağ Üniversitesi}, year = {2019}, volume = {24}, number = {3}, pages = {309 - 318}, doi = {10.17482/uumfd.558166}, title = {EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM}, key = {cite}, author = {Morkoç, Berk and Kahraman, Ayşegül and Yeğen, Dinçer and Yılmaz, Ercan} }
APA Morkoç, B. , Kahraman, A. , Yeğen, D. & Yılmaz, E. (2019). EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM . Uludağ Üniversitesi Mühendislik Fakültesi Dergisi , 24 (3) , 309-318 . DOI: 10.17482/uumfd.558166
MLA Morkoç, B. , Kahraman, A. , Yeğen, D. , Yılmaz, E. "EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM" . Uludağ Üniversitesi Mühendislik Fakültesi Dergisi 24 (2019 ): 309-318 <https://dergipark.org.tr/tr/pub/uumfd/issue/49627/558166>
Chicago Morkoç, B. , Kahraman, A. , Yeğen, D. , Yılmaz, E. "EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM". Uludağ Üniversitesi Mühendislik Fakültesi Dergisi 24 (2019 ): 309-318
RIS TY - JOUR T1 - EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM AU - Berk Morkoç , Ayşegül Kahraman , Dinçer Yeğen , Ercan Yılmaz Y1 - 2019 PY - 2019 N1 - doi: 10.17482/uumfd.558166 DO - 10.17482/uumfd.558166 T2 - Uludağ Üniversitesi Mühendislik Fakültesi Dergisi JF - Journal JO - JOR SP - 309 EP - 318 VL - 24 IS - 3 SN - 2148-4147-2148-4155 M3 - doi: 10.17482/uumfd.558166 UR - https://doi.org/10.17482/uumfd.558166 Y2 - 2019 ER -
EndNote %0 Uludağ Üniversitesi Mühendislik Fakültesi Dergisi EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM %A Berk Morkoç , Ayşegül Kahraman , Dinçer Yeğen , Ercan Yılmaz %T EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM %D 2019 %J Uludağ Üniversitesi Mühendislik Fakültesi Dergisi %P 2148-4147-2148-4155 %V 24 %N 3 %R doi: 10.17482/uumfd.558166 %U 10.17482/uumfd.558166
ISNAD Morkoç, Berk , Kahraman, Ayşegül , Yeğen, Dinçer , Yılmaz, Ercan . "EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM". Uludağ Üniversitesi Mühendislik Fakültesi Dergisi 24 / 3 (Aralık 2019): 309-318 . https://doi.org/10.17482/uumfd.558166
AMA Morkoç B. , Kahraman A. , Yeğen D. , Yılmaz E. EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM. UUJFE. 2019; 24(3): 309-318.
Vancouver Morkoç B. , Kahraman A. , Yeğen D. , Yılmaz E. EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM. Uludağ Üniversitesi Mühendislik Fakültesi Dergisi. 2019; 24(3): 309-318.
IEEE B. Morkoç , A. Kahraman , D. Yeğen ve E. Yılmaz , "EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM", Uludağ Üniversitesi Mühendislik Fakültesi Dergisi, c. 24, sayı. 3, ss. 309-318, Ara. 2019, doi:10.17482/uumfd.558166

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