Stannik Oksit (SnO2) İnce Film Sentezi ve Karakterizasyonu

Yıl 2024, Cilt: 29 Sayı: 1, 88 - 96, 30.04.2024

Reşit Özmenteş

https://doi.org/10.53433/yyufbed.1299973

Cited By: 1

Öz

SnO2 (stannik oksit) ince filmler, stannik klorür (SnCl4) çözeltisinin basit bir sprey kaplama cihazı ile 400°C altlık sıcaklığında mikroskop lam altlığı üzerine atomize edilmesiyle hazırlandı. Numuneler UV-Vis, XRD, SEM ve EDS spektroskopik teknikleri ile optiksel, yapısal, morfolojik ve bileşimsel olarak incelenmiştir. Optik analiz, sentezlenen filmlerin görünür bölgede %70-88 geçirgenliğe sahip olduğunu ve bant aralığı enerji (Eg) değerinin 3.89 eV olduğunu gösterdi. Absorbans ve geçirgenlik ölçümlerine dayalı olarak filmin dalga boyuna bağlı kırılma indisi dağılımı bulunmuş ve Swanepoel yöntemi ile kalınlığı 239 nm olarak hesaplanmıştır. XRD çalışmaları filmlerin amorf yapıda olduğunu belirlemiştir. FE-SEM mikrografları, 884 nm boyutunda granüler yapıyı ve 287.1-341.8 nm civarında film kalınlığını ortaya koyarken, EDX analizi, biriktirilen ince filmlerin stokiyometrik olmayan yapısını gösterdi.

Anahtar Kelimeler

FE-SEM, İnce film kalınlığı, Kalay oksit, SnCl4 öncüsü, UV-vis spectroskopi, XRD

Synthesis and Characterization of Stannic Oxide (SnO2) Thin Film

Öz

SnO2 (Stannic oxide) thin films were prepared by atomizing stannic chloride (SnCl4) solution onto microscope slide substrate at 400°C substrate temperature with a simple spray coating device. The samples were examined optically, structurally, morphologically, and compositionally by UV-Vis, XRD, SEM and EDS spectroscopic techniques. Optical analysis showed that the synthesized films had 70–88% transmittance in the visible region and the band gap energy (Eg) value was 3.89 eV. Based on absorbance and transmittance measurements, the wavelength-dependent refractive index distribution of the film was found and its thickness was calculated as 239 nm by the Swanepoel method. XRD studies determined that the films are amorphous structure. FE-SEM micrographs revealed that granular structure with a size of 884 nm, and a film thickness around 287.1-341.8 nm while the EDX analysis indicated the non-stoichiometric structure of the deposited thin films.

Anahtar Kelimeler

FE-SEM, SnCl4 precursor, Thin film thickness, Tin oxide, UV-vis spectroscopy, XRD

Kaynakça

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