Year 2021, Volume 11 , Issue 2, Pages 1058 - 1067 2021-06-01

Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes
Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes

Mahmut BUCURGAT [1]


Metal-Polymer-Semiconductor (MPS) Schottky Barrier Diodes (SBD) were manufactured and their basic electrical parameters were obtained by the measurement of the forward and reverse bias current-voltage (I-V) in the wide bias voltage range (±3V) to determine the voltage dependent effects on Nickel-Sulphur (NiS) doped Poly Vinyl Pyrrolidone (PVP) polymer interlayer. The saturation current (I0), zero-bias barrier height (ΦB0), rectifying rate (RR), ideality factor (n) and the real value of series - shunt resistances (Rs - Rsh) were calculated. The voltage dependent profile of n (V), ΦB(V), and Rs (V) were derived. The forward bias ln I-V plot of the MPS type SBD indicates a good rectifier behaviour and it has two distinctive linear parts with different slopes which correspond to low (0.288 ≤V ≤0.625 V) and moderate (0.672 ≤ V ≤ 0.960 V) bias voltages and then deviates from linearity due to Rs and interlayer at high forward bias voltages. Energy dependent profile of Nss was obtained from the forward bias I-V data by considering voltage dependent barrier height (ΦB) and n. Nss plot represents U-shape behaviour in the forbidden bandgap. The mean value of Nss was found at about 7.0x1012 eV-1 cm-2 and this value is in the acceptable limit for a semiconductor device and such lower values of Nss are the consequences of the passivation effect on the surface states.
Metal-Polymer-Semiconductor (MPS) Schottky Barrier Diodes (SBD) were manufactured and their basic electrical parameters were obtained by the measurement of the forward and reverse bias current-voltage (I-V) in the wide bias voltage range (±3V) to determine the voltage dependent effects on Nickel-Sulphur (NiS) doped Poly Vinyl Pyrrolidone (PVP) polymer interlayer. The saturation current (I0), zero-bias barrier height (ΦB0), rectifying rate (RR), ideality factor (n) and the real value of series - shunt resistances (Rs - Rsh) were calculated. The voltage dependent profile of n (V), ΦB(V), and Rs (V) were derived. The forward bias ln I-V plot of the MPS type SBD indicates a good rectifier behaviour and it has two distinctive linear parts with different slopes which correspond to low (0.288 ≤V ≤0.625 V) and moderate (0.672 ≤ V ≤ 0.960 V) bias voltages and then deviates from linearity due to Rs and interlayer at high forward bias voltages. Energy dependent profile of Nss was obtained from the forward bias I-V data by considering voltage dependent barrier height (ΦB) and n. Nss plot represents U-shape behaviour in the forbidden bandgap. The mean value of Nss was found at about 7.0x1012 eV-1 cm-2 and this value is in the acceptable limit for a semiconductor device and such lower values of Nss are the consequences of the passivation effect on the surface states.
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Primary Language en
Subjects Physics, Applied
Published Date Haziran-2021
Journal Section Fizik / Physics
Authors

Orcid: 0000-0002-6368-1945
Author: Mahmut BUCURGAT (Primary Author)
Institution: GAZI UNIVERSITY - FACULTY OF SCIENCE
Country: Turkey


Dates

Application Date : October 14, 2020
Acceptance Date : December 29, 2020
Publication Date : June 1, 2021

Bibtex @research article { jist810687, journal = {Journal of the Institute of Science and Technology}, issn = {2146-0574}, eissn = {2536-4618}, address = {}, publisher = {Igdir University}, year = {2021}, volume = {11}, pages = {1058 - 1067}, doi = {10.21597/jist.810687}, title = {Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes}, key = {cite}, author = {Bucurgat, Mahmut} }
APA Bucurgat, M . (2021). Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes . Journal of the Institute of Science and Technology , 11 (2) , 1058-1067 . DOI: 10.21597/jist.810687
MLA Bucurgat, M . "Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes" . Journal of the Institute of Science and Technology 11 (2021 ): 1058-1067 <https://dergipark.org.tr/en/pub/jist/issue/61423/810687>
Chicago Bucurgat, M . "Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes". Journal of the Institute of Science and Technology 11 (2021 ): 1058-1067
RIS TY - JOUR T1 - Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes AU - Mahmut Bucurgat Y1 - 2021 PY - 2021 N1 - doi: 10.21597/jist.810687 DO - 10.21597/jist.810687 T2 - Journal of the Institute of Science and Technology JF - Journal JO - JOR SP - 1058 EP - 1067 VL - 11 IS - 2 SN - 2146-0574-2536-4618 M3 - doi: 10.21597/jist.810687 UR - https://doi.org/10.21597/jist.810687 Y2 - 2020 ER -
EndNote %0 Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes %A Mahmut Bucurgat %T Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes %D 2021 %J Journal of the Institute of Science and Technology %P 2146-0574-2536-4618 %V 11 %N 2 %R doi: 10.21597/jist.810687 %U 10.21597/jist.810687
ISNAD Bucurgat, Mahmut . "Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes". Journal of the Institute of Science and Technology 11 / 2 (June 2021): 1058-1067 . https://doi.org/10.21597/jist.810687
AMA Bucurgat M . Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes. Iğdır Üniv. Fen Bil Enst. Der.. 2021; 11(2): 1058-1067.
Vancouver Bucurgat M . Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes. Journal of the Institute of Science and Technology. 2021; 11(2): 1058-1067.
IEEE M. Bucurgat , "Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes", Journal of the Institute of Science and Technology, vol. 11, no. 2, pp. 1058-1067, Jun. 2021, doi:10.21597/jist.810687