General electrical characterisation of Ag/TiO2/n-InP/Au Schottky Diode
Abstract
In this study Ag/TiO2/n-InP/Au structures are formed on 500 μm thick, (100) oriented n-InP semiconductor having 3.13x1018 cm-3 carrier density, by using sputtering method. TiO2 is grown as an interface with thickness of 60 Å. Some parameters of this structure are investigated in temperature range of 120- 360 K. It is noticed that there are two linear regions in forward bias current-voltage (I-V) plot. These two regions are called as LBR (low bias region) and MBR(middle bias region). Richardson coefficient is determined and mean barrier height is calculated with double Gaussian distribution.
Keywords
TiO2, n-InP, Richardson coefficient, Gaussian distribution, Schottky
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