General electrical characterisation of Ag/TiO2/n-InP/Au Schottky Diode

Year 2021, , 328 - 339, 15.12.2021

Ahmet Kursat Bılgılı , Rabia Çağatay Mustafa Ozturk , Metin Özer

https://doi.org/10.31466/kfbd.856824

Cited By: 1

Abstract

In this study Ag/TiO2/n-InP/Au structures are formed on 500 μm thick, (100) oriented n-InP semiconductor having 3.13x1018 cm-3 carrier density, by using sputtering method. TiO2 is grown as an interface with thickness of 60 Å. Some parameters of this structure are investigated in temperature range of 120- 360 K. It is noticed that there are two linear regions in forward bias current-voltage (I-V) plot. These two regions are called as LBR (low bias region) and MBR(middle bias region). Richardson coefficient is determined and mean barrier height is calculated with double Gaussian distribution.

Keywords

TiO2, n-InP, Richardson coefficient, Gaussian distribution, Schottky

Ag/TiO2/n-InP/Au Schottky diyodu için Gaussian dağılımı

Abstract

Bu çalışmada, püskürtme metodu ile Ag/TiO2/n-InP/Au yapılar, 500 m kalınlığında (100) yönelimli ve3.13x1018 cm-3 taşıyıcı yoğunluğuna sahip n-InP yarı iletkeni ile büyütülmüştür. TiO2 , 60 A kalınlığında bir arayüz olarak büyütülmüştür. Bu yapının bazı parametreleri 120-360 K aralığında incelenmiştir. Akım-Voltaj (I-V) grafiğinde iki farklı lineer bölgenin olduğu farkedilmiştir. Bu iki bölge LBR (düşük beslem bölgesi) ve MBR (orta beslem bölgesi) olarak adlandırılmıştır. Richardson sabiti ve ortalama bariyer yüksekliği, çift Gaussian dağılımı ile hesaplanmıştır.

Keywords

TiO2, n-InP, Richardson sabiti, Gaussian dağılımı, Schottky

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