General electrical characterisation of Ag/TiO2/n-InP/Au Schottky Diode
Öz
In this study Ag/TiO2/n-InP/Au structures are formed on 500 μm thick, (100) oriented n-InP semiconductor having 3.13x1018 cm-3 carrier density, by using sputtering method. TiO2 is grown as an interface with thickness of 60 Å. Some parameters of this structure are investigated in temperature range of 120- 360 K. It is noticed that there are two linear regions in forward bias current-voltage (I-V) plot. These two regions are called as LBR (low bias region) and MBR(middle bias region). Richardson coefficient is determined and mean barrier height is calculated with double Gaussian distribution.
Anahtar Kelimeler
TiO2, n-InP, Richardson coefficient, Gaussian distribution, Schottky
Kaynakça
- Chand S., Kumar, J. (1997). “Effects of barrier height distribution on the behavior of a Schottky diode.” Journal of Applied Physics 82 (10) 5005.
- Çokduygulular, E., Çetinkaya, Ç., Yalçın, Y. et al. (2020). “A comprehensive study on Cu-doped ZnO (CZO) interlayered MOS structure”. J Mater Sci: Mater Electron 31, 13646–13656 https://doi.org/10.1007/s10854-020-03922-6
- Güzelçimen, F.,Tanören, B., Çetinkaya, Ç., Kaya, M., Efkere, H., Özen, Y., Bingöl, D., Sirkeci, M., Kınacı, B., Ünlü, M., Özçelik, S. (2020). “The effect of thickness on surface structure of rf sputtered TiO2 thin films by XPS, SEM/EDS, AFM and SAM” Vacuum. doi.org/10.1016/j.vacuum.2020.109766
- Hudait, M.K., Venkateswarlu, P., and Krupanidhi, S.B. (2001). “Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures.” Solid-State Electronics. 45 (1) 133-141.
- Janardhanam V., Ashok Kumar, A., Rajagopal Reddy V., Narasimha Reddy, P., (2009) “Study of current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) characteristics of molybdenum Schottky contacts on n-InP (1 0 0)” Journal of Alloys and Compounds 485 (1) 467.
- Janardhanam, V., Jyothi, I., Ahn, K.S., Choi C.J., (2013) “Temperature-dependent current-voltage characteristics of Se Schottky contact to n-type Ge” Thin Solid Films 546 63.
- Özdemir, A. F., Turut, A., Kökçe, A. (2006). “The double Gaussian distribution of barrier heights in Au/n-GaAs Schottky diodes from I-V-T characteristics” Semiconductor Science and Technology 21 298.
- Padovani, F. A. and Stratton, R., (1966). “Field and Thermionic-Field EMSsion in Schottky Barriers.” Solid- State Electronics. 9 (7) 695-707.
- Rhoderick, E.H., Williams, R.H. (1988). Metal Semiconductor Contacts. Oxford: Oxford Press, 257-264.
- Saxena, A.N. (1969). “Forward current-voltage characteristics of Schottky barriers on n-type silicon.” Surface Science, 13 151-171.
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