Tek anahtarlı kısmi rezonanslı inverterde güvenli çalışma bölgesi

Abstract

Endüksiyon ile ısıtma (EI) teknolojisi, özellikle son yıllarda, yüksek verimlilik, hız, güvenli çalışma ve benzeri özellikleri nedeniyle ev tipi uygulamalarda geniş bir kullanım alanı bulmaktadır. EI sistemlerinde genellikle yüksek verimlilikleri ve yumuşak anahtarlama yetenekleri nedeniyle rezonanslı inverter devreleri kullanılmaktadır. EI sistemlerinde kullanılan çeşitli rezonanslı inverterler arasında, tek anahtarlı kısmi rezonanslı (SSQR) inverter topolojisi düşük maliyetli ve düşük güç gerektiren uygulamalar için tercih edilmektedir. Ancak, SSQR inverter, maliyet avantajına rağmen, yumuşak anahtarlama ile çalışabildiği güç aralığının dar oluşu, güç kontrolünün zorluğu ve yarı iletken anahtarlarda oluşan akım ve gerilim zorlanmalarının diğer inverter uygulamalarına kıyasla yüksek olması gibi dezavantajları barındırır. Güç elektroniği devrelerindeki güvenli çalışma koşullarını zorlayan en önemli unsurlar, yarı iletken anahtarların maruz kalacağı yüksek gerilim ve yüksek akımlardır. Bununla birlikte elektronik devrelerin tüm bileşenleri aşırı akım ve aşırı gerilim stresinden etkilense de, invertör uygulamalarında en savunmasız elemanlar yarı iletken anahtarlardır. Aşırı akımın ürettiği aşırı ısı, zorlamalı soğutma yöntemleriyle azaltılabilse bile, yüksek gerilimlere maruz kalan yarı iletken anahtarlar, muhtemelen kısa devre olacak ve devre çalışamaz hale gelecektir. Bu çalışmada EI'da kullanılan SSQR inverter için yarı iletken anahtarların maruz kaldığı aşırı gerilimleri engelleyecek bir yöntem önerilmektedir. Önerilen yöntemin avantajları teorik olarak incelenmiş ve simulasyonlar ve prototip devreler aracılığıyla doğrulanmıştır.

Keywords

• Endüksiyonlu ısıtma sistemleri
• rezonanslı inverter
• tek anahtarlı kısmi rezonanslı inverter
• yarı iletken anahtar
• aşırı gerilim koruma

Safe operating area in single switch quasi resonant inverter

Abstract

Induction heating (IH) technology has found extensive use in residential applications in recent times, owing to its high efficiency, speed, and safe operation characteristics. Resonant inverter circuits are commonly employed in IH systems due to their high efficiency and soft-switching capabilities. Among various resonant inverters used in IH systems, the single-switch quasi-resonant (SSQR) inverter topology is preferred for low-cost and low-power applications. However, despite its cost advantages, the SSQR inverter has limitations, including a narrow operating range for soft-switching, challenges in power control, and higher stresses on semiconductor switches compared to other inverter applications. The most critical factors challenging the safe operation conditions of power electronic circuits are the high voltage and current stresses imposed on semiconductor switches. While all components of electronic circuits are affected by excessive current and voltage stresses, semiconductor switches, particularly in inverter applications, are the most vulnerable elements. Despite efforts to reduce excessive heat generated by overcurrent through forced cooling methods, semiconductor switches subjected to high voltages are prone to short-circuiting, rendering the circuit inoperable. This study proposes a method to mitigate the overvoltage stresses on semiconductor switches used in SSQR inverters for induction heating applications. The theoretical advantages of the proposed method have been investigated and verified through simulations and prototype circuits.

Keywords

• Induction heating systems
• resonant inverter
• single switch quasi resonant inverter
• semiconductor switch
• over voltage protection

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