Al/Si3N4/p-Si aygıtının C-V characteristikleri üzerine metal ile yarıiletken kontak arasındaki yalıtkan tabakanın kalınlık etkisi

Öz

Metal-Yalıtkan-Yarıiletken (MIS) yapılar elektronik ve optoelektronikteki iyi uygulamalarından büyük ilgiye sahiptirler. Bu yapıların önemi tabaka depolama özelliği, kapasitans etkisi ve yüksek dileketrik sabitlerine sahip olmalarına dayandırılabilir. Bu yüzden Si₃N₄ tabakalı iki adet numune plazma destekli kimyasal buhar biriktirme (PECVD) yöntemiyle birinin kalınlığı 5 nm diğerinin kalınlığı 50 nm olacak şekilde p-tip Si üzerine büyütüldü. Si₃N₄ tabakasının kalınlığı bir elipsometreyle kontrol edildi. Al/Si₃N₄/p tip Si kontağın üzerine Si₃N₄ tabakasının kalınlık etkisi 10 kHz-1 MHz frekans değerleri için -5 V’tan +5 V voltaj aralığında yapıların kapasitans-voltaj (C–V) ve iletkenlik-voltaj (G–V) karakteristikleri ile oda sıcaklığında  araştırıldı. Farklı kalınlığa sahip kontakların her bir durumda kapasitans değerlerinin artan frekansla azaldığı ve iletkenlik değerlerinin arttığı tespit edildi. Ara yüzey durumları (Nss) ve Seri direnç (Rs) etkileri, bariyer yüksekliği (Φb) ve taşıyıcı yoğunluğu (Na) kapasitans-voltaj (C–V) ve iletkenlik-voltaj (G–V) karakteristikleri karakterizasyonlardan elde edildi ve açıklandı. Ayrıca 5 nm ve 50 nm kalınlık değerindeki tabakalar için 500 kHz frekansta çift yönlü C-V ve G-V karakterizasyonlarından elde edildi ve kıyaslandı. Sonuç olarak, Si₃N₄ tabakasının kalınlık değişiminin kontakların özelliklerini etkilediği görüldü ve bu kontakların Memrezistör yapısına sahiptirler ve gelecekte hafıza aygıtları için kullanılabilir ve geliştirilebilirler.

Anahtar Kelimeler

• Al/Si3N4/p- Si,Schottky,Kapasitans özelliği,MIS,Kalınlık etkisi

The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device

Abstract

Metal-insulator-semiconductor (MIS) structures have great interest for their good applications in electronic and optoelectronic. Their importance can be attributed that they have storage layer property, capacitance effect and high dielectric constant. For this reason, two samples of Si₃N₄ layers were deposited with plasma-enhanced chemical vapor deposition (PECVD) technique on p-type Si; first is about 5 nm thickness and the other is about 50 nm. The thicknesses of Si₃N₄ were adjusted by an ellipsometer. The thickness effect of Si₃N₄ layers on the Al/Si₃N₄/p type Si contact was studied with the capacitance-voltage (C–V) and conductance–voltage (G-V) characteristics of the contact at the frequency range from 10 kHz to 1 MHz and applied bias voltage from −5 V to +5 V at room temperature. In each contact having different insulator layers, capacitance values decreased and conductance values increased with increasing frequencies. The interface states (Nss), the effect of series resistance (Rs), barrier height (Φb) and carrier concentration (Na) were found from the capacitance-voltage (C–V) and conductance–voltage (G-V) measurements and explained in the details. To determine memristor behavior of the Al/Si₃N₄/p type Si contact, dual C-V and G-V measurements were performed at 500 kHz and the room temperature, and the results were compared for 5 nm and 50 nm thicknesses layers. Consequently, changing of Si3N4 layer thickness influenced properties of the contacts, and these two contacts have memristor behavior and, they can be used and improved as memory devices in the future.

Keywords

• Al/Si3N4/p- Si,Schottky,Capacitance behavior,MIS,Thickness effect

References

1. Güllü Ö, Türüt A. “Electrical analysis of organic dye-based MIS Schottky contacts”. Microelectronic Engineering, 87(12), 2482-2487, 2010.
2. Karataş Ş, Yildirim N, Türüt A. “Electrical properties and interface state energy distributions of Cr/n-Si Schottky barrier diode”. Superlattices and Microstructures, 64, 483-494, 2013.
3. Aydın ME, Yakuphanoglu F, Eom JH, Hwang DH. “Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current–voltage and capacitance-voltage methods”. Physica B: Condensed Matter, 387(1-2), 239-244, 2007.
4. Ataseven T, Tatatroğlu A. “Temperature-dependent dielectric properties of Au/Si3N4/n-Si (metal insulator semiconductor) structures”. Chine Physics B, 22(11), 117310-1-117310-6, 2013.
5. Zeyrek S, Acaroğlu E, Altındal Ş, Birdoğan S, Bülbül MM. “The effect of series resistance and interface states on the frequency dependent C-V and G/w-V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes”. Current Applied Physics, 13(7), 1225-1230, 2013.
6. Orak I, Toprak M, Türüt A. “Illumination impact on the electrical characterizations of an Al/Azure A/p-Si heterojunction”. Physica Scripta, 89(115810), 1-5, 2014.
7. Doğan H, Yıldırım N, Orak I, Elagöz S, Türüt A. “Capacitance-conductance-frequencycharacteristics of Au/Ni/n-GaN/undoped GaNStructures”. Physica B, Condensed Matter, 457, 48-53, 2015.
8. Bilkan Ç, Zeyrek S, San SE, Altındal Ş. “A compare of electrical characteristics in Al/p-Si(MS) and Al/C20H12/p-Si (MPS) type diodes using current-voltage (I–V) and capacitance–voltage(C-V) measurements”. Materials Science in Semiconductor Processing, 32, 137-144, 2015.

9. Gökçen M, Altuntaş H, Altındal Ş, Özçelik S. “Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures”. Materials Science in Semiconductor Processing, 15(1), 41-46, 2012.
10. Bülbül MM, Zeyrek S, Altındal Ş, Yüzer H. “On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes". Microelectronic Engineering, 83(3), 577-581, 2006.
11. Kadoda A, Iwasugi T, Nakatani K, Nakayama K, Mori M, Maezaawa K, Miyazaki E, Mizutani T. “Characterization of Al2O3/InSb/Si MOS diodes having various InSb thicknesses grown on Si(1 1 1) substrates”. Semiconductor Science and Technology, 27(045007), 1-6, 2012.
12. Korucu D, Duman S. “Frequency and temperature dependent interface states and series resistance in Au/SiO2/p-Si (MIS) Diode”. Science of Advanced Materials, 7(7), 1291-1297, 2015.
13. Demirezen S, Kaya A, Vural Ö, Altındal Ş. “The effect of Mo-doped PVC þ TCNQ interfacial layer on the electrical properties of Au/PVC þ TCNQ/p-Si structures at room temperature”. Materials Science in Semiconductor Processing, 33, 140-148, 2015.
14. Kavasoglu AS, Kavasoglu N, Kodolbas AO, Birgi O, Oktu O, Oktik S. “Negative capacitance peculiarities in a-Si:H/c-Si rectifier structure”. Microelectron. Engineering, 87(2), 108-116, 2010.
15. Vural Ö, Şafak Y, Türüt A, Altındal Ş. “Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C-V and G/ω–V characteristics”. Journal of Alloys and Compounds, 513, 107-111, 2012.
16. Soylu M, Cavas M, Al-Ghamdi AA, Al-Hartomy OA, Eş-Tantwy F, Yakuphanoglu F. “The effects of the interfacial layer with interface states on controlling the electronic properties of Au/n-GaAs Schottky diode”. Journal of Optoelectronics and Advanced Materials, 14(1-2), 61-66, 2012.
17. Demirezen S, Özavcı E, Altındal Ş. “The effect of frequency and temperature on Capacitance/conductance-voltage(C/G-V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs)”. Materials Sciencein Semiconductor Processing, 23, 1-6, 2014.
18. Kaçus H, Aydoğan Ş, Ekinci D, Kurudirek SV, Türüt A. “Optical absorption of the anthracene and temperature-dependent capacitance–voltage characteristics of the Au/anthracene/n-Si heterojunction in metal–organic-semiconductor configuration”. Physica E: Low-dimensional Systems and Nanostructures, 74, 505-509, 2015.
19. Sze SM. Physics of Semiconductor Devices. 2nd ed. New Jersey, USA, Wiley, 1979.
20. Bülbül MM. “Frequency and temperature dependent dielectric properties of Al/Si3N4/p-Si(100) MIS structure”. Microelectronic Engineering, 84(1), 124-128, 2007.
21. Orak I, Ürel M, Bakan G, Dana A. “Memristive behavior in a junctionless flash memory cell”. Applied Physics Letters, 106(233506), 1-5, 2015.
22. Sze SM, Kwok KN. Physics of Semiconductor Devices. 3rd ed. New Jersey, USA, John Wiley & Sons Inc, 2006.
23. Rýer I, Vanko G, Lalinský T, Kunzo P, Vallo M, Vávra I, Thomáš P. “Pt/NiO ring gate based Schottky diode hydrogen sensors with enhanced sensitivity and thermal stability”. Sensors and Actuators B, 202, 1-8, 2014.