Channel Length Modulation in a Polystyrene Insulated Organic Field Effect Transistor Using PEDOT: PSS Composite Electrode

Year 2018, Volume: 22 Issue: 6, 1493 - 1499, 01.12.2018

Ahmet Demir

https://doi.org/10.16984/saufenbilder.343272

Abstract

The Organic Field Effect
Transistor (OFET) with channel length modulation was fabricated by spin coating
method using a Poly(3-hexylthiophene) (P3HT) and the Polystyrene (PS) insulator
on a prepatterned as source-drain Indium thin oxide (ITO) substrate. The
poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was used
as  gate electrode. So, the structure of
OFET device is obtained as ITO/P3HT/PS/PEDOT:PSS. The ITO/PS/PEDOT:PSS
structure was prepared using same method for capacitance measurements of a
polymer insulator. Electrical characterization of OFET devices were held in
total darkness and in air ambient for the purpose of achieving output and
transfer current-voltage (I-V)
characteristics. The main parameters such as the threshold voltage (V_Th), field effect mobility (m_FET)
and current on/off ratio (I_on/off)
of the OFET devices were extracted from capacitance-frequency (C-f) plot of the ITO/PS/PEDOT:PSS
structure.  It was found that fabricated
PS-OFETs exhibit good device performance such as low V_Th, remarkable mobility, and  I_on/off
values.

Keywords

P3HT, Polymer gate electrode, Transparent OFETs, Insulators, PEDOT:PSS, Polystyrene, P3HT

PEDOT: PSS Kompozit Elektrot Kullanarak Polistiren Yalıtkanlı Organik Alan Etkili Transistörde Kanal Uzunluğu Modülasyonu

Abstract

Kanal uzunluğu modülasyonlu
Organik Alan Etkili Transistör (OFET), önceden oluşturulmuş indiyum kalay
oksitli (ITO) kaynak-savak alt-tabaka üzerinde Poly(3-hexylthiophene) (P3HT) ve
Polystyrene (PS) yalıtkan kullanarak spin kaplama yöntemi ile üretildi. Kapı Elektrodu olarak 
poly(3,4-ethylenedioxythiophene) polystyrene sulfonate
(PEDOT:PSS) kullanılmıştır.
Böylece, OFET cihazının yapısı ITO/P3HT/PS/ PEDOT:PSS olarak elde edilmiştir.
ITO/PS/PEDOT:PSS yapısı polimer yalıtkanının kapasitans ölçümleri için aynı
yöntem kullanılarak hazırlanmıştır. OFET cihazlarının elektriksel
karakterizasyonu çıkış ve transfer akım voltaj (I-V) karakteristikleri elde
etmek amacıyla tam karanlıkta ve hava ortamında yapılmıştır. OFET cihazlarının
eşik voltajı (V_Th), alan etkili mobilite (m_FET) ve akım
açma/kapama oranı (I_on/off) gibi ana parametreler, ITO/PS/PEDOT:PSS yapısının
kapasitans frekansı (C-f) ölçümlerinden elde edildi. Üretilen PS-OFET'lerin düşük
V_Th, kaydadeğer mobilite ve akım açık/kapama değerleri gibi
iyi cihaz performansı sergilediği gözlenmiştir.

Keywords

Polimer kapı elektrodu, Şeffaf OFETler, Yalıtkanlar, PEDOT: PSS, Polistiren, P3HT

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