Sol-jel yöntemiyle üretilen Cu katkılı CoOx/n-Si yapıların elektriksel özelliklerinin araştırılması

Yıl 2024, , 1053 - 1060, 01.10.2024

Yusuf Yıldız , Şerif Rüzgar

https://doi.org/10.35414/akufemubid.1398898

Öz

CoOx, Cu katkılı CoOx ve CuOx içeren ince filmlerin n-Si substratlar üzerine biriktirilmesi için sol-jel döndürerek kaplama tekniği kullanıldı. Daha sonra, elde edilen heteroeklem yapılarının elektriksel özelliklerinin kapsamlı bir incelemesi yapıldı. Sonuçlar açıkça Cu'nun katkılama yoluyla dahil edilmesinin CoOx/n-Si diyotun elektriksel özellikleri üzerinde belirgin bir etki yarattığını göstermektedir. Özellikle, tüm diyotlar, karanlık akım-voltaj (I-V) özelliklerinde fark edilebilir bir özellik olan doğrultucu davranış sergiledi. I-V verileri diyotların seri direnci (Rs), düzeltme oranını (RR), idealite faktörünü (n) ve bariyer yüksekliğini (ΦB) kapsayan önemli bağlantı parametrelerini belirlemek için kullanıldı. CoOx/n-Si, Cu katkılı CoOx/n-Si ve CuOx/n-Si için idealite faktörü değerleri sırasıyla 3,19, 1,99 ve 2,19 eV olarak elde edilmiştir. Ayrıca diyotların kapasitans-gerilim (C-V) özelliklerinin ölçümleri 10 kHz ila 1 MHz frekans aralığında gerçekleştirildi. Bu bulgular, bakır doping konsantrasyonunun uygun şekilde seçilmesinin, CoOx/n-Si diyotların elektriksel özelliklerini iyileştirmek için etkili bir yol olduğunu göstermektedir.

Anahtar Kelimeler

Cu katkılı Kobalt Oksit, Heteroeklem yapılar, Sol jel metodu, Akım-Voltaj

Investigation of the Electrical Properties of Cu-doped CoOx/n-Si Structures Fabricated by the Sol-Gel Method

Öz

The sol-gel spin coating technique was employed for the deposition of thin films comprising CoOx, Cu-doped CoOx, and CuOx onto n-Si substrates. Subsequently, an exhaustive examination of the electrical properties of the resultant heterojunction structures was conducted. The outcomes unequivocally indicate that the incorporation of Cu through doping exerts a pronounced influence on the electrical attributes of the CoOx/n-Si diode. Notably, all diodes exhibit rectifying behavior, a discernible feature in their dark current-voltage (I-V) characteristics. The I-V data was further utilized to ascertain pivotal junction parameters, encompassing series resistance (Rs), rectification ratio (RR), ideality factor (n), and barrier height (ΦB). The values of the ideality factor for CoOx/n-Si, Cu doped CoOx/n-Si and CuOx/n-Si are obtained to be 3.19, 1.99 and 2.19 eV, respectively. Furthermore, the capacitance-voltage (C-V) characteristics of diodes were performed within the frequency range of 10 kHz to 1 MHz. These findings underscore that judicious manipulation of the copper doping concentration can serve as an effective means to modulate the electrical properties of CoOx/n-Si diodes.

Anahtar Kelimeler

Cu doping Cobalt Oxide, Heterojunction structures, Sol gel method, Current-Voltage

Kaynakça

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