Araştırma Makalesi

A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices

Cilt: 7 Sayı: 1 31 Ocak 2019
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A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices

Öz

Memristor-based resistive random access memory (RRAM) devices are very good competitors for next generation non-volatile crossbar memory applications.  The sneak paths problem is one of the main constraints in fabricating crossbar memory devices. The one diode-one resistor (1D1R) structure design is effective for suppressing the sneak paths problem. Suitable circuit models are needed to simulate semiconductor structures.

A general circuit model for memristor-based one diode-one resistor structures is proposed in this work. The Simulation Program with Integrated Circuit Emphasis (SPICE) environment was used to simulate the designed circuit. Well-known mathematical models such as those of Strukov, Biolek, Joglekar, Prodromakis and Zha were used to simulate the memristor component of the circuit. The current-voltage characteristics were obtained for different mathematical models. All results were compatible with the expected characteristics.  The best fit characteristics were acquired using the Zha and Strukov models.


Anahtar Kelimeler

Kaynakça

  1. M. A. Zidan, H. A. H. Fahmy, M. M. Hussain, and K. N. Salama, "Memristor-based memory: The sneak paths problem and solutions," Microelectronics J., vol. 44, no. 2, pp. 176-183, Feb. 2013.
  2. A. Chen, "Memory Select Devices," in Emerging Nanoelectronic Devices, Chichester, United Kingdom: John Wiley & Sons Ltd, 2014, pp. 227-245.
  3. C. Xu, D. Niu, N. Muralimanohar, R. Balasubramonian, T. Zhang, S. Yu, and Y. Xie, "Overcoming the challenges of crossbar resistive memory architectures," in 2015 IEEE 21st International Symposium on High Performance Computer Architecture, HPCA 2015, 2015, pp. 476-488.
  4. F.Gül and Y.Babacan, "A Circuit Model for Single Cell 1 Diode-1 Memristor (1D1M) Semiconductor Device," in II. International Academic Research Congress, 2017, p. 548.C.
  5. D. B., Strukov, G. S., Snider, D. R. Stewart, and R. S., Williams, "The missing memristor found", Nature, vol.453, pp.80-83, 2008.
  6. L.O., Chua, "Memristor - the missing circuit element," IEEE Trans. Circuit Theory, vol.18, pp. 507-519, 1971.
  7. F. Gul and H. Efeoglu, "Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor," Superlattices Microstruct., vol. 101, pp. 172-179, Jan. 2017.
  8. Z. Biolek, D. Biolek, and V. Biolková, "SPICE model of memristor with nonlinear dopant drift," Radioengineering, vol. 18, no. 2, pp. 210-214, 2009.

Ayrıntılar

Birincil Dil

İngilizce

Konular

Mühendislik

Bölüm

Araştırma Makalesi

Yayımlanma Tarihi

31 Ocak 2019

Gönderilme Tarihi

5 Eylül 2018

Kabul Tarihi

17 Ocak 2019

Yayımlandığı Sayı

Yıl 2019 Cilt: 7 Sayı: 1

Kaynak Göster

APA
Gül, F. (2019). A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices. Balkan Journal of Electrical and Computer Engineering, 7(1), 15-19. https://doi.org/10.17694/bajece.457395
AMA
1.Gül F. A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices. Balkan Journal of Electrical and Computer Engineering. 2019;7(1):15-19. doi:10.17694/bajece.457395
Chicago
Gül, Fatih. 2019. “A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices”. Balkan Journal of Electrical and Computer Engineering 7 (1): 15-19. https://doi.org/10.17694/bajece.457395.
EndNote
Gül F (01 Ocak 2019) A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices. Balkan Journal of Electrical and Computer Engineering 7 1 15–19.
IEEE
[1]F. Gül, “A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices”, Balkan Journal of Electrical and Computer Engineering, c. 7, sy 1, ss. 15–19, Oca. 2019, doi: 10.17694/bajece.457395.
ISNAD
Gül, Fatih. “A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices”. Balkan Journal of Electrical and Computer Engineering 7/1 (01 Ocak 2019): 15-19. https://doi.org/10.17694/bajece.457395.
JAMA
1.Gül F. A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices. Balkan Journal of Electrical and Computer Engineering. 2019;7:15–19.
MLA
Gül, Fatih. “A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices”. Balkan Journal of Electrical and Computer Engineering, c. 7, sy 1, Ocak 2019, ss. 15-19, doi:10.17694/bajece.457395.
Vancouver
1.Fatih Gül. A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices. Balkan Journal of Electrical and Computer Engineering. 01 Ocak 2019;7(1):15-9. doi:10.17694/bajece.457395

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