Schottky diyot tabanlı UV detektörlerde seri direnç etkileri

Öz

Bu çalışmada GaN tabanlı UV algılayıcı GUVA S12SD Schottky diyotun sıcaklık bağımlı akım – voltaj karakteristikleri seri direnç etkileri yönünden incelenmiştir.  Bu amaçla FPGA tabanlı, basit ve düşük maliyetli bir ölçüm sistemi hazırlanarak, başarıyla kullanılmıştır.  Sonuçlar, aygıtın akım iletim mekanizmasının termiyonik yayılımla açıklanabileceğini göstermektedir.  Seri direnç hesapları için iki farklı yöntem kullanılmış ve birbiri ile büyük uyuma sahip sonuçlar elde edilmiştir.  İdealite faktörü ve seri direncin sıcaklık bağımlılığından, ara yüzeydeki durumların ve buradaki yük taşıyıcılarının aygıt karakteristikleri üzerinde etkin olduğu belirlenmiştir.

Anahtar Kelimeler

• UV,Schottky diyot,GaN,seri direnç,FPGA

Serial resistance effects on Schotky diode based UV dedectors

Öz

In this study, the temperature dependent current - voltage characteristics of GaN based UV sensor GUVA S12SD Schottky diode were investigated in terms of series resistance effects.  For this purpose, a FPGA based simple and low cost measurement system has been prepared and employed successfully.  The results show that the current transport mechanism of the device can be explained by means of thermionic emission.  Two different methods were used for the series resistance calculations and their results were consistent with each other.  According to the temperature dependent ideality factor and series resistance, it has been determined that interface states and charge carriers on the states effect on device characteristics. 

Anahtar Kelimeler

• UV,Schottky diode,GaN,serial resistance,FPGA

Kaynakça

1. Patel, M., Kim, H.S., Park, H.H. ve Kim J., Active adoption of void formation in metal-oxide for all transparent super-performing photodetectors, Scientific Reports, 6(1), 25461, (2016).
2. Muñoz, E., (Al,In,Ga)N-Based photodetectors. some materials issues, Physica Status Solidi (B), 244(8), 2859-77, (2007).
3. GUVA-S12SD SMD type UV sensor data sheet, Genicom Co., Korea, (2010).
4. Brmarcum, Semiconductor curve trace with the analog discovery 2 http://www.instructables.com/id/Semiconductor-Curve-Tracer-With-the-Analog Discove/ (erişim tarihi: 03.09.2018)
5. Sze, S.M., Physics of Semiconductor Devices, Second Edition, John Wiley & Sons, New York, (1981).
6. Rhoderick E.H. ve Williams, R.H., Metal – Semiconductor Contacts, Second Edition, Clarendon Press, Oxford, (1988).
7. Aydın, M.E., Yakuphanoğlu, F., Eom, J-H. ve Hwang D-H., Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current–voltage and capacitance–voltage methods, Physica B, 387, 239 – 244, (2007).
8. Kavasoglu, N., Tozlu, C., Pakma, O., Kavasoglu, A.S., Ozden, S., Metin, B., Birgi, O. ve Oktik, S., Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure, Synthetic Metals, 159 (17-18), 1880-1884, (2009).

9. Norde, H., A modified forward I –V plot for Schottky diodes with high series resistance, Journal of Applied Physics, 50, 5052, (1979).
10. Aubry, V. ve Meyer, F., Schottky diodes with high series resistance: Limitations of forward IV methods, Journal of Applied Physics, 76, 7973, (1994).
11. Cheung S.K. ve Cheung N.W., Extraction of Schottky diode parameters from forward current‐voltage characteristics, Applied Physics Letters, 49 (2), 85 – 87, (1986).
12. Altındal, Ş., Kanbur, H., Yıldız, D.E. ve Parlak, M., Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures, Applied Surface Science, 217 (11), 5056 – 5061, (2007).
13. Aboelfotoh, M.O., Cros A., Svensson B.G. ve Tu, K.N., Schottky-barrier behavior of copper and copper silicide on n-type and p-type silicon, Physical Review B, 41(14), 9819 – 9827, (1990).
14. Tataroğlu, A. ve Altındal, Ş., The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics, Journal of Alloys and Compounds, 484, 405 – 409, (2009).
15. Afandiyeva, İ.M., Dökme, İ., Altındal, Ş., Abdullayeva, L.K. ve Askerov, Sh. G., The frequency and voltage dependent electrical characteristics of Al–TiW–Pd2Si/n-Si structure using I–V, C–V and G/ω–V measurements, Microelectronic Engineering, 85(2), 365 – 370, (2008).
16. Bülbül, M.M., Zeyrek, S., Altındal, Ş. and Yüzer, H., On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes,Microelectronic Engineering, 83(3), 577 – 581, (2006).
17. Korucu, D., Duman S., Frequency and temperature dependent interface states and series resistance in Au/SiO2/p -Si (MIS) diode, Science of Advanced Materials,7(7), 1291 – 1297, (2015).