Research Article

Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate

Volume: 11 Number: 2 December 30, 2021
EN

Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate

Abstract

Memristor, also known as memory resistor, is considered as the fourth passive electronic element expressing the relationship between magnetic flux and electric charge. One of the most important features of the memristor is that it has low power consumption. Minimizing power consumption is an important issue in the electronic circuits. However, the fact that the memristor element was not yet fully manufactured has led researchers to design memristor-like emulator circuits. These circuits, which approximate the memristor properties, are realized by combining the other existing electronic elements. In this paper, a basic NAND logic gate is considered and the change in power consumption when using a memristor instead of the standard resistor in the gate circuit is examined. For this purpose, the NAND logic circuit was constituted for four different memristor emulators, and the power consumption values of these circuits were obtained by simulation and experiments. These values are compared with the power consumption values of NAND circuits obtained by using standard resistors equivalent to the memristor resistance. The results clearly show that the memristor gate circuits reduce power consumption compared to standard resistive gate circuits.

Keywords

Supporting Institution

Inonu University Project of Scientific Research Unit (BAP)

Project Number

FYL-2019-2012

Thanks

Desteklerinden Dolayı İnönü Üniversitesi BAP birimine teşekkürlerimizi sunarız.

References

  1. Referans1: L. O. Chua, “Memristor-the missing circuit element,” IEEE Transactions on Circuit Theory, vol. 18, no.5, pp. 507-519,1971.
  2. Referans2: L. O. Chua and S. M. Kang, “Memristive devices and systems,” Proceedings of the IEEE, vol. 64, no.2, pp. 209-223,1976.
  3. Referans3: L. O. Chua, “Device modeling via nonlinear circuit elements,” IEEE Transactions on Circuits and Systems, vol. 27, no.11, pp. 1014-1044, 1980.
  4. Referans4: G. Oster and D. Auslander, “The Memristor: A New Bond Graph Element,” Transactions of ASME, vol.72, pp.1-4, 1972.
  5. Referans5: Y. F. Lam, “Formulation of normal form equations of nonlinear networks containing memristors and coupled elements,” IEEE Transactions on Circuit Theory, vol. 19, no.6, pp.585-594,1972.
  6. Referans6: K. C. Liu, “Dynamic behavior of a memristive circuit model for long-base P-N junction diodes,” Northridge: California State University, Master of Science Engineering Project Report,1975.
  7. Referans7: M. Miliç and L. Novak, “The anti-Lagrangian equations: A missing network description,” Journal of the Franklin Institute, vol.307, no. 3, pp.183-191,1979.
  8. Referans8: F. A. Buot and A. K. Rajagopal, “Binary information storage at zero bias in quantum-well diodes,” Journal of Applied Physics, vol.76, no.9, pp.5552-5560,1994.

Details

Primary Language

English

Subjects

Electrical Engineering

Journal Section

Research Article

Publication Date

December 30, 2021

Submission Date

May 2, 2021

Acceptance Date

October 6, 2021

Published in Issue

Year 2021 Volume: 11 Number: 2

APA
Gürsul, S., & Hamamcı, S. E. (2021). Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate. European Journal of Technique (EJT), 11(2), 200-208. https://doi.org/10.36222/ejt.931338
AMA
1.Gürsul S, Hamamcı SE. Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate. EJT. 2021;11(2):200-208. doi:10.36222/ejt.931338
Chicago
Gürsul, Sevgi, and Serdar Ethem Hamamcı. 2021. “Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate”. European Journal of Technique (EJT) 11 (2): 200-208. https://doi.org/10.36222/ejt.931338.
EndNote
Gürsul S, Hamamcı SE (December 1, 2021) Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate. European Journal of Technique (EJT) 11 2 200–208.
IEEE
[1]S. Gürsul and S. E. Hamamcı, “Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate”, EJT, vol. 11, no. 2, pp. 200–208, Dec. 2021, doi: 10.36222/ejt.931338.
ISNAD
Gürsul, Sevgi - Hamamcı, Serdar Ethem. “Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate”. European Journal of Technique (EJT) 11/2 (December 1, 2021): 200-208. https://doi.org/10.36222/ejt.931338.
JAMA
1.Gürsul S, Hamamcı SE. Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate. EJT. 2021;11:200–208.
MLA
Gürsul, Sevgi, and Serdar Ethem Hamamcı. “Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate”. European Journal of Technique (EJT), vol. 11, no. 2, Dec. 2021, pp. 200-8, doi:10.36222/ejt.931338.
Vancouver
1.Sevgi Gürsul, Serdar Ethem Hamamcı. Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate. EJT. 2021 Dec. 1;11(2):200-8. doi:10.36222/ejt.931338

Cited By

All articles published by EJT are licensed under the Creative Commons Attribution 4.0 International License. This permits anyone to copy, redistribute, remix, transmit and adapt the work provided the original work and source is appropriately cited.Creative Commons Lisansı