Araştırma Makalesi

Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate

Cilt: 11 Sayı: 2 30 Aralık 2021
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Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate

Öz

Memristor, also known as memory resistor, is considered as the fourth passive electronic element expressing the relationship between magnetic flux and electric charge. One of the most important features of the memristor is that it has low power consumption. Minimizing power consumption is an important issue in the electronic circuits. However, the fact that the memristor element was not yet fully manufactured has led researchers to design memristor-like emulator circuits. These circuits, which approximate the memristor properties, are realized by combining the other existing electronic elements. In this paper, a basic NAND logic gate is considered and the change in power consumption when using a memristor instead of the standard resistor in the gate circuit is examined. For this purpose, the NAND logic circuit was constituted for four different memristor emulators, and the power consumption values of these circuits were obtained by simulation and experiments. These values are compared with the power consumption values of NAND circuits obtained by using standard resistors equivalent to the memristor resistance. The results clearly show that the memristor gate circuits reduce power consumption compared to standard resistive gate circuits.

Anahtar Kelimeler

Proje Numarası

FYL-2019-2012

Kaynakça

  1. Referans1: L. O. Chua, “Memristor-the missing circuit element,” IEEE Transactions on Circuit Theory, vol. 18, no.5, pp. 507-519,1971.
  2. Referans2: L. O. Chua and S. M. Kang, “Memristive devices and systems,” Proceedings of the IEEE, vol. 64, no.2, pp. 209-223,1976.
  3. Referans3: L. O. Chua, “Device modeling via nonlinear circuit elements,” IEEE Transactions on Circuits and Systems, vol. 27, no.11, pp. 1014-1044, 1980.
  4. Referans4: G. Oster and D. Auslander, “The Memristor: A New Bond Graph Element,” Transactions of ASME, vol.72, pp.1-4, 1972.
  5. Referans5: Y. F. Lam, “Formulation of normal form equations of nonlinear networks containing memristors and coupled elements,” IEEE Transactions on Circuit Theory, vol. 19, no.6, pp.585-594,1972.
  6. Referans6: K. C. Liu, “Dynamic behavior of a memristive circuit model for long-base P-N junction diodes,” Northridge: California State University, Master of Science Engineering Project Report,1975.
  7. Referans7: M. Miliç and L. Novak, “The anti-Lagrangian equations: A missing network description,” Journal of the Franklin Institute, vol.307, no. 3, pp.183-191,1979.
  8. Referans8: F. A. Buot and A. K. Rajagopal, “Binary information storage at zero bias in quantum-well diodes,” Journal of Applied Physics, vol.76, no.9, pp.5552-5560,1994.

Ayrıntılar

Birincil Dil

İngilizce

Konular

Elektrik Mühendisliği

Bölüm

Araştırma Makalesi

Yayımlanma Tarihi

30 Aralık 2021

Gönderilme Tarihi

2 Mayıs 2021

Kabul Tarihi

6 Ekim 2021

Yayımlandığı Sayı

Yıl 2021 Cilt: 11 Sayı: 2

Kaynak Göster

APA
Gürsul, S., & Hamamcı, S. E. (2021). Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate. European Journal of Technique (EJT), 11(2), 200-208. https://doi.org/10.36222/ejt.931338
AMA
1.Gürsul S, Hamamcı SE. Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate. EJT. 2021;11(2):200-208. doi:10.36222/ejt.931338
Chicago
Gürsul, Sevgi, ve Serdar Ethem Hamamcı. 2021. “Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate”. European Journal of Technique (EJT) 11 (2): 200-208. https://doi.org/10.36222/ejt.931338.
EndNote
Gürsul S, Hamamcı SE (01 Aralık 2021) Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate. European Journal of Technique (EJT) 11 2 200–208.
IEEE
[1]S. Gürsul ve S. E. Hamamcı, “Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate”, EJT, c. 11, sy 2, ss. 200–208, Ara. 2021, doi: 10.36222/ejt.931338.
ISNAD
Gürsul, Sevgi - Hamamcı, Serdar Ethem. “Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate”. European Journal of Technique (EJT) 11/2 (01 Aralık 2021): 200-208. https://doi.org/10.36222/ejt.931338.
JAMA
1.Gürsul S, Hamamcı SE. Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate. EJT. 2021;11:200–208.
MLA
Gürsul, Sevgi, ve Serdar Ethem Hamamcı. “Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate”. European Journal of Technique (EJT), c. 11, sy 2, Aralık 2021, ss. 200-8, doi:10.36222/ejt.931338.
Vancouver
1.Sevgi Gürsul, Serdar Ethem Hamamcı. Investigation of Power Consumption Effect of Various Memristor Emulators on a Logic Gate. EJT. 01 Aralık 2021;11(2):200-8. doi:10.36222/ejt.931338

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