Yıl 2019, Cilt 20 , Sayı , Sayfalar 92 - 98 2019-12-16

FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

Gonca ILGU BUYUK [1] , Saliha ILICAN [2]


In this work, Er doped ZnO films and silicon substrates were used as n-type and p-type semiconductors, respectively. In order to obtained p-Si/n-ZnO:Er heterojunction structures, top (aluminum; Al) and bottom (gold; Au) metal contacts were deposited using a evaporator and sputter, respectively. The electrical characterization of these heterojunctions were investigated by current–voltage (I–V) characteristics at room temperature and in dark. It was observed that Au/p-Si/n-ZnO:Er/Al heterojunction structures have rectifying properties. The diode parameters such as barrier height, series resistance and ideality factor were investigated by using I–V measurement data. These parameters were determined by using different methods.
ZnO, Heterojunctions, Diode parameters
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Birincil Dil en
Konular Temel Bilimler
Bölüm Makaleler
Yazarlar

Yazar: Gonca ILGU BUYUK
Kurum: FEN FAKÜLTESİ
Ülke: Turkey


Orcid: 0000-0003-4064-4364
Yazar: Saliha ILICAN (Sorumlu Yazar)
Kurum: Eskişehir Teknik Üniversitesi
Ülke: Turkey


Destekleyen Kurum Eskisehir Technical University
Proje Numarası 1501F032
Teşekkür This work was supported by Eskisehir Technical University Commission of Research Projects under Grant no. 1501F032. This study was conducted as part of the Doctoral Thesis of Gonca Ilgu Buyuk.
Tarihler

Yayımlanma Tarihi : 16 Aralık 2019

Bibtex @araştırma makalesi { estubtda642315, journal = {Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering}, issn = {2667-4211}, address = {btda@anadolu.edu.tr}, publisher = {Eskişehir Teknik Üniversitesi}, year = {2019}, volume = {20}, pages = {92 - 98}, doi = {10.18038/estubtda.642315}, title = {FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS}, key = {cite}, author = {Ilgu Buyuk, Gonca and Ilıcan, Saliha} }
APA Ilgu Buyuk, G , Ilıcan, S . (2019). FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS . Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering , 20 () , 92-98 . DOI: 10.18038/estubtda.642315
MLA Ilgu Buyuk, G , Ilıcan, S . "FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS" . Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering 20 (2019 ): 92-98 <https://dergipark.org.tr/tr/pub/estubtda/issue/50600/642315>
Chicago Ilgu Buyuk, G , Ilıcan, S . "FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS". Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering 20 (2019 ): 92-98
RIS TY - JOUR T1 - FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS AU - Gonca Ilgu Buyuk , Saliha Ilıcan Y1 - 2019 PY - 2019 N1 - doi: 10.18038/estubtda.642315 DO - 10.18038/estubtda.642315 T2 - Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering JF - Journal JO - JOR SP - 92 EP - 98 VL - 20 IS - SN - 2667-4211- M3 - doi: 10.18038/estubtda.642315 UR - https://doi.org/10.18038/estubtda.642315 Y2 - 2019 ER -
EndNote %0 Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS %A Gonca Ilgu Buyuk , Saliha Ilıcan %T FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS %D 2019 %J Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering %P 2667-4211- %V 20 %N %R doi: 10.18038/estubtda.642315 %U 10.18038/estubtda.642315
ISNAD Ilgu Buyuk, Gonca , Ilıcan, Saliha . "FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS". Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering 20 / (Aralık 2019): 92-98 . https://doi.org/10.18038/estubtda.642315
AMA Ilgu Buyuk G , Ilıcan S . FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering. 2019; 20: 92-98.
Vancouver Ilgu Buyuk G , Ilıcan S . FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering. 2019; 20: 92-98.