Yüksek Sıcaklıkta Tavlanmış Cu Katkılı ZnO (CZO) Arayüzeyli Au/N-Si Yapısının Dielektrik Özelliklerinin Detaylı İncelenmesi

Yıl 2024, Cilt: 5 Sayı: 1, 82 - 89, 29.05.2024

Halil İbrahim Efkere

Öz

Bu çalışmada, Cu katkılı ZnO (CZO) arayüzeye sahip Au/n-Si yapısının dielektrik özellikleri araştırıldı. CZO ince film kaplama, RF püskürtme sistemi ile n-tipi Si levha üzerine gerçekleştirildi. Elektriksel analiz için Au metal kontağı yapılarak cihaz tamamlandı. Au/CZO/n–Si yapısının dielektrik parametreleri türü dielektrik sabiti (ε'), dielektrik kaybı (ε''), dielektrik kayıp tanjantı (tan δ ) ve ac iletkenliği (σ ac) kapasitans (𝐶) parametreleri ve iletkenlik (𝐺) verileri kullanılarak belirlendi. Bu veriler 10 kHz-1 MHz frekans aralığında 1, 2, 3 ve 4V için elde edilmiştir. Analiz sonucunda dielektrik parametrelerinin gerilim değerine bağlı olduğu görülmüştür.

Anahtar Kelimeler

ZnO, CZO, yüksek tavlama sıcaklığı, dielektrik özellikler

Kaynakça

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