Effect of measurement frequency on admittance characteristics in Al/p-Si structures with interfacial native oxide layer

Year 2019, Volume: 3 Issue: 2, 129 - 135, 31.12.2019

Muhammed Can Özdemir , Ömer Sevgili , İkram Orak , Abdülmecit Türüt

https://doi.org/10.32571/ijct.642886

Cited By: 3

https://izlik.org/JA39EL72JG

Abstract

Al/p-Si/Al diodes with interfacial native oxide layer were formed.
Their frequency induced admittance-voltage measurements were made. The
frequency-dependent density distribution of interface states has been
determined from the corrected characteristics by considering the series
resistance effect which masks the interface trap loss. The majority carrier
density corresponding to the depletion and inversion parts of the C^-2-V curve, was determined 1.82 x 10¹⁴
and 4.48 x 10¹⁴  cm^-3
at 1000 kHz, respectively. The fact that the carrier density obtained from the
inversion part of the plot is higher than that obtained from the depletion part
can be related to the increase in the density of negative space charge in the
depletion region.The value of  was determined as
0.95 eV from the same plot. Interface
state density decreased from 4.31 x 10¹² eV^-1cm^-2
at 100 kHz to 7.30 x 10¹¹ eV^-1 cm^-2 at 1000
kHz, because the interface charges do not follow the ac signal and do not contribute to capacitance values in high
frequencies.

Keywords

Metal-semiconductor contacts , MIS diodes , interface states , capacitance characteristics , conductance characteristics

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