Işık Altında Elektrodepozisyon Yöntemi ile Üretilmiş GaxOyNz/p-Si Diyot Yapısının Elektriksel Karakterizasyonu

Yıl 2022, , 2129 - 2139, 01.12.2022

Özcan Birgi

https://doi.org/10.21597/jist.1115556

Öz

Bu çalışmada, GaxOyNz yarıiletken materyal LED grubu aydınlatması altında elektrodepozisyon tekniği kullanılarak p-Si (100) üzerine biriktirilmiştir. Galyum Nitrat, Amonyum Nitrat ve deiyonize su karışımı kullanılarak elektrolit çözeltisi hazırlanmıştır. Platin levha ve p-Si sırasıyla anot ve katot olarak kullanılmıştır. GaxOyNz/p-Si aygıt yapısının üretim aşamasından sonra, 20-100 oC aralığında 10 oC adımlarla sıcaklığa bağımlı Akım-Gerilim (I-V) ölçümleri alınarak iki boyutlu arayüzey durum yoğunluğu dağılımı analizi yapılmıştır. Yapılan analizler sonucunda GaxOyNz/p-Si aygıt yapısının doğrultucu diyot özelliği sergilediği görülmüştür.

Anahtar Kelimeler

GaN, Ga2O3, Elektrodepozisyon, fotoelektrokataliz, galyum bazlı malzemeler, elektriksel karakterizasyon

Destekleyen Kurum

Muğla Sıtkı Koçman Üniversitesi-BAP Koordinatörlüğü

Proje Numarası

14/067

Electrical Characterization of the GaxOyNz/p-Si Diode Structure Manufactured by Electrodeposition Method Under Illumination

Öz

In this study, GaxOyNz films were deposited onto p-Si (100) substrates by using electrodeposition technique under illumination. A mixture of gallium nitrate, ammonnium nitrade and distilled water was utilized as electrolyte. Platinum and p-Si were used as anode and cathode, respectively. After the deposition process of GaxOyNz/p-Si structure, temperature dependent Current-Voltage (I-V) measurements were performed and characterized between 20 oC and 100 oC in 10 oC steps to analyses of two dimensional density of interface states of the device. Characteristics show that GaxOyNz/p-Si device structure exhibits rectification behavior.

Anahtar Kelimeler

Electrodeposition, photoelectrochatalis, gallium based materials, GaN, Ga2O3, electrical charecterisation

Proje Numarası

14/067

Kaynakça

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