The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz

Öz

Au/PPy/n-Si (MPS) type SBDs were fabricated and their electrical characteristics were investigated in the temperature range of 140-340 K at 100 and 500 kHz frequencies by using analyzed the C-V measurements. The C-V plots have inversion, depletion and accumulation regions for each temperature. The value of C increases with increasing temperature almost as exponentially in inversion and depletion regions. The reverse bias C-2 vs V plots show a linear behavior in the wide range bias voltage and so the values of doping atoms (ND), Fermi energy (EF), diffusion potential (Vd), and barrier height (B(C-V)) were obtained from intercepts and slopes of these plots for each temperature and frequency. While the EF increases with increasing temperature, B decreases as linearly. The l values of B(C-V) range from 0.703 eV at 140 K to 0.161 eV at 340 K for 100 kHz and 0.810 eV at 140 K to 0.391 eV at 340 K for 500 kHz, respectively. The electrical conductivity (ac) increases as exponential with temperature. The activation energy (Ea) values were found as 30.8 meV from the slope Ln(ac)-q/kT plot. These results implied that electrical characteristics of the SBDs are quite function of temperature at low frequencies and temperatures.

Anahtar Kelimeler

• Au/PPy/n-Si (MPS),Temperature and frequency dependent reverse bias C-V characteristics,Arrhenius plot and activation energy

Kaynakça

1. Afandiyeva, I M, Altındal Ş, Marıl E, Guliyeva T Z, Gojayeva, S H M, Abdullayeva, L K, Bagırova, S E, 2014. The investigation of tunnel properties of Al-TiW-PtSi/n-Si <111> (MS) Schottky Barrier Diodes (SBDs) in the wide temperature range, Journal of Qafqaz University Physics, 22; 107-118.
2. Alialy S, Altındal S, Tanrıkulu E E, Yıldız D E, 2014. Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes. Journal of Applied Physics, 116; 083709.
3. Alialy S, Kaya A, Marıl E, Altındal S, Uslu I, 2015. Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range Philosophical Magazine, 95;1448-1461.
4. Altındal Ş, Parlaktürk F, Tataroğlu A, Parlak M, Sarmasov S N, Agasiev A A, 2008. The temperature profile and bias dependent series resistance of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures. Vacuum, 82; 1246-1250.
5. Bengi S, Bülbül M M, 2013. Electrical and dielectric properties of Al/ HfO2/p-Si MOS devices at high temperatures, Current Applied Physics, 13;1819-1825.
6. Bülbül M M, 2007. Frequency and temperature dependent dielectric properties of Al/Si3N4/p-Si(100) MIS structure. Microelectronic Enginering. 84; 124-128.
7. Chattopadhyay S, Bera L K, Maiti C K, Ray S K, Bose P K, Dentel D, Kubler L, Bischoff J L, 1998. Journal of Materials Science-Materials in Electronics, 9; 403-407.
8. Demircioğlu Ö, Karataş Ş, Yıldırım N, Bakkaloğlu Ö F, Türüt A, 2011. Temperature dependent current-voltage and capacitance-voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si. Journal of Alloys and Compounds, 509; 6433-6439.

9. Demircioğlu Ö, Karataş Ş. Yıldırım N. Bakkaloğlu Ö F, 2011. Effect of temperature on series resistance determination of electrodeposited Cr/n-Si/Au-Sb Schottky structures. Microelectronik Enginering, 88; 2997-3002.
10. Güllü Ö, Biber M, Türüt A, 2008. Electrical characteristics and inhomogeneous barrier analysis of aniline green/p-Si heterojunctions. Journal of Materials Science-Materials in Electronics,19; 986-991.
11. Gümüş A, Altındal Ş, 2014. Current-transport mechanisms in gold/polypyrrolle/n-silicon Schottky barirer diodes in the temperature range of 110-360 K. Material Science in Semiconductor Processing, 28; 66-71
12. Gümüş A, Ersöz G, Yücedağ İ, Bayrakdar S, Altındal Ş, 2015. Comparative study of the temperature dependent dielectric properties of Au/PPy/n-Si (MPS)-type Schottky barrier diodes. Journal of The Korean Physical Society, 67; 889-895.
13. Karabulut A, 2018. Dielectric Characterization of Si_based Heterojunction with TiO2 Interfacial Layer. Iğdır University journal of the Institute of Science and Technology, 8; 119-129.
14. Kınacı Barış 2017. Effect on the electrical characterizations of temperature and frequency depending on series resistance and ınterface states in ms structure. Journal of Polytechnic-Politeknik Dergisi, 20; 313-318.
15. Marıl E, Altındal S, Kaya A, Koçyiğit S, Uslu I, 2015. On double exponential forward bias current-voltage (I-V) characteristics of Au/Ca3CO4Ga0,001Ox/n-Si/Au (MS) type structures in temperature range of 80-340 K. Philosophical Magazine, 95;1049-1068.
16. Marıl E, Kaya A, Çetinkaya H G, Koçyiğit S, Altındal S, 2015. On the temperature dependent forward bias current-voltage (I-V) characteristics in Au/2%graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure. Materials Science in Semiconductor Processing, 39; 332-338.
17. Marıl E, Kaya A, Koçyiğit S, Altındal S, 2015. On the analysis of the leakage current in Au/Ca3Co4Ga0.001Ox/n-Si structure in the temperature range of 80-340 K. Materials Science in Semiconductor Processing, 31; 256-261.
18. Marıl E, Tan S O, Altındal Ş, Uslu İ, 2018. Evaluation of Electric and Dielectric Properties of Metal-Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.0001Ox) Interlayer. IEEE Transactions on Electron Devices, 65; 3901-3908.
19. Nicollian E H, Brews J R, 1982. Metal-Oxide Semiconductor (MOS) Physics and Technology. Wiley, New York-ABD.
20. Orak İ, Koçyiğit A, 2016. The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal. Iğdır University journal of the Institute of Science and Technology, 6; 57-67.
21. Özdemir S, Altındal Ş, 1994. Temperature-dependent electrical characteristics of Al-SiOx-pSi solar cells.Solar Energy Matterials and Solar Cells, 32; 115-127.
22. Padma R, Sreenu K, Rajagopal Reddy V, 2017. Electrical and frequency dependence characteristics of Ti/polyethylene oxide (PEO)/p-type InP organic-inorganic Schottky junction. Journal of Alloys and Compounds, 695; 2587-2596.
23. Rajagopal Reddy V, 2014. Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer. Thin Solid Films, 556; 300–306.
24. Rhoderick E H, Williams R H, 1988. Metal-Semiconductor Contacts 2nd edn., Claredon Press, Oxford.
25. Sharma B L, 1984. Metal-Semiconductor Schottky Barrier Junction and Their Applications, Plenium Press- New York and London.
26. Siva Pratap Reddy M, Sreenu K, Rajagopal Reddy V, Park C, 2017. Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer. Journal of Materials Science: Materials in Electronics, 28;4847–4855.
27. Sze S M, 1981. Physics of Semiconductor Devices, 2nd edn., John Willey & Sons, New York- ABD.
28. Taşçoǧlu I, Aydemir U, Altndal Ş, 2010. The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer. Journal of Applied Physics, 108; 064506.
29. Yakuphanoglu, F, Senkal, B. F, 2007. Electronic and thermoelectric properties of polyaniline organic semiconductor and electrical characterization of Al/PANI MIS diode. Journal of Physical Chemistry C, 111; 1840-1846.
30. Yerişkin S, Balbaşı M, Orak İ, 2017. Frequency dependent electrical characteristics and origin of anomalous capacitance-voltage (C-V) peak in Au/(graphenedoped PVA)/n-Si capacitors. Journal of Materials Science-Materials in Electronics, 28: 7819-7826.