Ti/ p-GaN Schottky Diyotunun Elektriksel Parametrelerinin İncelenmesi

Yıl 2022, Cilt: 12 Sayı: 2, 752 - 760, 01.06.2022

Hatice Asıl Uğurlu

https://doi.org/10.21597/jist.1024690

Öz

Ti/p-GaN Schottky diyotunun elektriksel özellikleri araştırıldı. İdealite faktörü (n), engel yüksekliği (Фb) ve seri direnç (Rs) gibi temel diyot parametreleri akım-gerilim (I-V) karakteristiği özelliklerinden faydalanarak geleneksel I-V yöntemi, Cheung fonksiyonları ve Norde yöntemi ile incelendi. İdealite faktörü (n) I-V yönteminde 1.62 ve Cheung fonksiyonlarından 3.54 olarak hesaplandı. Farklı yöntemlerden hesaplanan engel yüksekliği (Фb) değerlerinin birbirine yakın değerlerde olduğu bulundu. Ti / p-GaN Schottky diyotunun hesaplanan seri direnç (Rs) değerleri de kohm mertebesinde olduğu görüldü. Ti/p-GaN Schottky diyotunun arayüzey durum yoğunluğunun büyüklüğü 6.35 × 1012 cm−2 eV−1 ile 3.48 × 1013 cm−2 eV−1 arasında değiştiği belirlendi.

Anahtar Kelimeler

Schottky diyot, engel yüksekliği, Norde yöntemi, Cheung fonksiyonları, I-V yöntem

Investigation of Electrical Parameters of Ti/ p-GaN Schottky Diode

Öz

The electrical properties of the Ti/p-GaN Schottky diode were investigated. Fundamental diode parameters such as ideality factor (n), barrier height (Фb) and series resistance (Rs) were analyzed using the traditional I-V method, Cheung functions and Norde method by utilizing current-voltage (I-V) characteristics. The ideality factor (n) was calculated as 1.62 in the I-V method and 3.54 from the Cheung functions. It was found that the barrier height (Фb) values calculated from different methods were close to each other. The calculated serial resistance (Rs) values of the Ti / p-GaN Schottky diode were also found to be of the order of kohm. The magnitude of the interface state density of the Ti/p-GaN Schottky diode was determined to vary between 6.35 × 1012 cm−2 eV−1 and 3.48 × 1013 cm−2 eV−1.

Anahtar Kelimeler

Schottky diode, barrier height, Norde method, Cheung functions, I-V method

Kaynakça

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