Quantum Transport Properties of InAs NWFET with Surface Traps

Yıl 2023, Cilt: 13 Sayı: 3, 1653 - 1662, 01.09.2023

Semran Ipek İbrahim Genç

https://doi.org/10.21597/jist.1232557

Öz

The quantum transport properties of InAs nanowire field effect transistor (NWFET) have been calculated and analyzed depending on the surface trap concentrations. Surface traps can be either impurity atoms, dangling bonds or structural deformations. Here, we have left some In and As atoms unsaturated to obtain surface traps. Our calculations show that the on-state voltage increases as the surface trap concentration increases. Within an equivalent circuit model, we have found that the effective field mobility is as low as 250 cm2/V.s following with small transconductance value of 2.4 nS for our simulated device. This shows that surface traps significantly effect the benchmarking properties of InAs NWFET.

Anahtar Kelimeler

Nanowire FET, Quantum transport, Surface traps, Quantum conductance, Ballistic transport, Device modeling

Destekleyen Kurum

TÜBİTAK

Proje Numarası

121E207

Teşekkür

This work was partly supported by Scientific and Technological Research Council of Turkiye (TÜBİTAK) under Project No. 121E207. Authors would like to thank Istanbul Medeniyet University, Science and Advanced Technologies Research Center (BILTAM) for its partly support to the project. Authors would also like to thank Süleyman Emre Önsay for his efforts in computer analyses.

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