Copper phthalocyanine organic thin film was deposited on n-Si semiconductor with indium (In) ohmic contact by the spin coating method. Gold (Au) metal is formed by thermal evaporation technique to form a rectifier contact. As a result, Au/CuPc/n-Si/In Schottky diode structure was produced. Diode parameters such as ideality factor, Schottky barrier height, saturation current, series resistance and shunt resistance were investigated by means of current-voltage (I-V) measurements. CuPc thin film deposited between Au and n-Si has shown a good rectifying properties. From this analysis, the values of Schottky barrier height and ideality factor at room temperature have determined as 0.757 eV and 2.49, respectively. Results show that the fabricated diode can be used in various optoelectronic applications.
Copper phthalocyanine Schottky barrier diode current-voltage barrier height ideality factor
FEN-BAP-C-09112017-163
Bakır ftalosiyanin Schottky engel diyot akım-gerilim engel yüksekliği idealite faktörü
GİRESUN ÜNİVERSİTESİ
FEN-BAP-C-09112017-163
Birincil Dil | Türkçe |
---|---|
Bölüm | Makaleler |
Yazarlar | |
Proje Numarası | FEN-BAP-C-09112017-163 |
Yayımlanma Tarihi | 15 Haziran 2020 |
Yayımlandığı Sayı | Yıl 2020 Cilt: 10 Sayı: 1 |
This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.