Synthesis of MoS2 thin films using the two-step approach

Yıl 2023, Cilt: 12 Sayı: 1, 297 - 301, 15.01.2023

Serkan Erkan , Ali Altuntepe , Recep Zan

https://doi.org/10.28948/ngumuh.1184705

Öz

In this study, MoS2 thin films were grown using two-step approach, which is based on employing both PVD and CVD techniques. The films were obtained initially by sputtering 1nm Mo film in the PVD system and followed by sulphurization of the film in CVD at 700oC. The grown films were optimized employing different sulphurization times. The main difference in our study from the current literature is using preheated CVD furnace (700oC) ahead of sulphurization. The films quality are then investigated using Raman and Photoluminance spectrometer as well as AFM measurements. The Raman spectrums indicate that two characteristic vibration modes of 2H-MoS2 phase were observed in all samples, however, vibration modes of 1T-MoS2 phase were also observed in some films at low sulphurization time. These results were also in line with PL measurements that confirm the direct band transition of the MoS2 films. The surface topography of the films were investigated by AFM for MoS2 films obtained by the sulfurization of 1 nm-thick Mo film in 15 minutes at 700oC which shows MoS2 crystals in triangle shape.

Anahtar Kelimeler

MoS2, Two-dimensional materials, Two-dimensional materials, Raman spectroscopy, Raman spectroscopy, PVD, CVD

Destekleyen Kurum

Nigde Omer Halisdemir University Scientific Projects Unit

Proje Numarası

FMT 2021/4-ÖNAP.

Teşekkür

The authors gratefully acknowledge funding from Nigde Omer Halisdemir University Scientific Projects Unit under a project number of FMT 2021/4-ÖNAP.

İki adımlı yaklaşım kullanılarak MoS2 ince filmlerin sentezlenmesi

Öz

Bu çalışmada, hem PVD hem de CVD tekniklerinin kullanılmasına dayanan iki aşamalı yaklaşım kullanılarak MoS2 ince filmler büyütülmüştür. Filmler ilk olarak 1 nm Mo filmin PVD sisteminde saçtırma yöntemiyle ve ardından filmin CVD' de 700oC' de sülfürlenerek elde edilmiştir. Büyütülmüş filmler, farklı sülfürizasyon süreleri kullanılarak optimize edilmiştir. Çalışmamızın güncel literatürden temel farkı, kükürtleme öncesinde önceden ısıtılmış CVD fırını (700oC) kullanılmasıdır. Filmlerin kalitesi daha sonra AFM ölçümlerinin yanı sıra Raman ve Fotolüminesans spektrometresi kullanılarak araştırılmıştır. Raman spektrumları, tüm örneklerde 2H-MoS2 fazının iki karakteristik titreşim modunun gözlemlendiğini, ancak bazı filmlerde düşük sülfürizasyon süresinde 1T-MoS2 fazının titreşim modlarının da gözlendiğini göstermektedir. Bu sonuçlar ayrıca MoS2 filmlerinin doğrudan bant geçişini doğrulayan PL ölçümleriyle de uyumludur. Filmlerin yüzey topografyası, 1 nm kalınlığında Mo filminin 700oC'de 15 dakikada sülfürlenerek elde edilen ve MoS2 kristallerini üçgen şeklinde gösteren MoS2 filmleri için AFM ile incelenmiştir.

Anahtar Kelimeler

İki-Boyutlu Malzemeler, Raman Spektroskopisi, MoS2, MoS2, Two-dimensional materials, Two-dimensional materials, Two-dimensional materials, Two-dimensional materials, Raman spectroscopy, Raman spectroscopy, Raman spectroscopy, Raman spectroscopy, PVD, PVD, CVD, CVD

Proje Numarası

FMT 2021/4-ÖNAP.

Kaynakça

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