Yüzey Si ve GaAs Tek Kristallerinin Düşük Sıcaklıklı Vakum-Termal Temizliği Yöntemi

Yıl 2023, , 1441 - 1444, 01.12.2023

Gunel Imanova

https://doi.org/10.2339/politeknik.1119884

Cited By: 1

Öz

Makale, yazarlar tarafından geliştirilen, Si ve GaAs tek kristallerinin yüzeyinin düşük sıcaklıkta vakum-termal temizleme yöntemi hakkında rapor veriyor, bu, Ba+ iyonlarının (ve ya alkali elementlerin) Si ve GaAs kristallerine önceden ultra yüksek ile temizlenmiş implantasyonundan oluşuyor. İyon aşındırma ve ardından 800 K - 15 dakika ve 1000 K'de 30 dakika olmak üzere iki aşamalı tavlama ile vakum edilmişdir. Etkin temizlemenin etkisi, aktif olan Ba+ ve alkali elementlerin iyonlarının ilk aşamada safsızlık atomları (O, C, S, N vb.) ısıtmanın ikinci aşamasından sonra kirliliklerdir.

Anahtar Kelimeler

Tek kristal, yüzey, ultra yüksek vakum, temizleme, implantasyon, alma katmanı

Method for Low-Temperature Vacuum-Thermal Cleaning of Surface Single Crystals Si and GaAs

Öz

The paper reports on a method of low-temperature vacuum-thermal cleaning of the surface of Si and GaAs single crystals developed by the authors, which consists in implanting Ba+ ions (or alkaline elements) into Si and GaAs crystals preliminarily cleaned by ultra-high vacuum by ion etching and subsequent annealing in two stage at 800 K - 15 minutes and at 1000 K for 30 minutes. The effect of effective cleaning is achieved due to the fact that the introduced ions of Ba+ and alkaline elements, being active, form compounds with impurity atoms (O, C, S, N, etc.) at the first stage and are removed together with impurities after the second stage of heating.

Anahtar Kelimeler

single crystal, low-temperature, Si and GaAs, surface, ultrahigh vacuum, cleaning, implantation, gettering layer

Kaynakça

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