Production, Pelleting and Characterization of IGZO particles by Sol-Gel Method

Öz

Indium Gallium Zinc Oxide (InGaZnO4, IGZO) material, which shows high electron mobility, low threshold voltage and transparent after coating, has been used with increasing acceleration in screen technologies. In this study, IGZO nanoparticles were successfully produced using the sol-gel method. The synthesized powders were calcined at 1100 and 1250 °C. Similarly, pellets produced from powders were heat treated at different sintering temperatures. Surface morphology and particle size, crystal and phase structure, chemical composition and thermal behavior of synthesized particles and pellets were carried out by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Differential Thermal Analysis-Thermogravimetric analysis (DTA-TGA), respectively. As a result of phase analysis, completely crystalline InGaZnO4 phase was obtained. The relative density of IGZO pellets sintered at 1300 oC for 12 hours was 93% and it showed highly IGZO crystalline structure and the large. IGZO particles and pellets developed in my study have the potential for high-quality target materials used in the application of electronic devices.

Anahtar Kelimeler

• IGZO,sol-gel,sputter target,pellet

Sol-Jel Yöntemiyle IGZO Partiküllerin Üretimi, Peletlenmesi ve Karakterizasyonu

Öz

Yüksek elektron mobilitesi, düşük eşik gerilimi ve kaplama sonrası şeffaf özellik gösteren İndiyum Galyum Çinko Oksit (InGaZnO4, IGZO) malzemesi ekran teknolojilerinde artan bir ivmeyle kullanılmaya başlamıştır. Bu çalışmada sol-jel yöntemi kullanılarak IGZO partikülleri başarılı bir şekilde üretildi. Sentezlenen tozlar 1100 ve 1250 °C ‘de kalsine edildi. Benzer şekilde tozlardan üretilen peletlere farklı sinterleme sıcaklıklarında ısıl işlem uygulandı. Sentezlenen partiküllerin ve peletlerin yüzey morfolojisi ve partikül boyutu, kristal ve faz yapısı, kimyasal kompozisyonu ve termal davranışları sırasıyla taramalı elektron mikroskobu (SEM), X-ışınları kırınımı (XRD), X-ışını fotoelektron spektroskopisi (XPS) ve Diferansiyel Termal Analiz-Termogravimetrik Analiz (DTA-TGA) cihazları ile gerçekleştirildi. Faz analizi sonucu tamamen kristalin InGaZnO4 fazı elde edildi. 12 saat boyunca 1300 oC ‘de sinterlenen IGZO peletlerin bağıl yoğunluğu, %93 olarak belirlenmiş olup, yüksek IGZO kristal yapısı ve büyük tane boyutu göstermiştir. Çalışmamda geliştirilen IGZO partikülleri ve peletler elektronik cihazların uygulanmasında kullanılan yüksek kaliteli hedef malzemeler için potansiyele sahiptir.  

Anahtar Kelimeler

• IGZO,Sol-Jel,hedef malzeme,pelet

Teşekkür

Bu çalışmanın üretim ve karakterizasyon çalışmalarında destek veren Dokuz Eylül Üniversitesi, Elektronik malzemeler üretimi ve Uygulama merkezine teşekkür ederim. Ayrıca çalışmaya katkı sunan öğrencilerim Sinan Öge, Ümit Kızıltaş ve Hande Erdoğdu’ ya da değerli katkıları için teşekkür ederim.

Kaynakça

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