Platinum Adsorption and Diffusion on Two-Dimensional Gallium Nitride
Öz
Anahtar Kelimeler
Kaynakça
- [1] Flores, R. G., Contreras, N. H., Martinez, L. A., Powell, R. C., Greene, J. E. 1994. Temperature-Dependent Optical Band Gap of the Metastable Zinc-Blende Structure β-GaN. Phys. Rev.B 50(1994), 8433.
- [2] Magnuson, M., Mattesini, M., Höglund, C., Birch, J., Hultman, L. 2010. Electronic Structure of GaN and Ga Investigated by Soft X-ray Spectroscopy and First-Principles Methods. Phys. Rev. B 81(2010), 085125.
- [3] Lester, S. D., Ponce, F. A., Craford, M. G., Steigerwald, D. A. 1995. High Dislocation Densities in High-Efficiency GaN-Based Light-Emitting Diodes. Appl. Phys. Lett. 66(1995), 1249.
- [4] Eastman, L., Tilak, V., Smart, J. A., Green, B. M., Chu, K. K., Dimitrov, R., Kim, H., Prunty, T., Ambacher, O., Weimann, N., Shealy, J. R. 2001. Undoped AlGaN/GaN HEMTs for Microwave Power Amplification. IEEE Trans. Electron. Devices 48(2001), 479.
- [5] Schäfer, S., Wyrzgol, S. A., Caterino, R., Jentys, A., Schoell, S. J., Hävecker, M., Gericke, A. K., Lercher, J. A., Sharp, I. D., Stutzmann, M. 2012. Platinum Nanoparticles on Gallium Nitride Surfaces: Effect of Semiconductor Doping on Nanoparticle Reactivity. J. Am. Chem. Soc., 134(2012), 12528-12535.
- [6] Tilak, V., Matocha, K., Sandvik, P. 2006. Novel GaN and SiC Based Gas Sensors. Phys. Stat. Sol. (c) 3(2006), 548-553.
- [7] Luther, B. P., Wolter, S. D., Mohney, S. E. 1999. High-Temperature Pt Schottky Diode Gas Sensors on n-type GaN. Sensors and Actuators B 56(1999), 164-168.
- [8] Schalwig, J., Muller, G., Eickhoff, M., Ambacher, O., Stutzmann, M. 2002. Group III-Nitride-Based Gas Sensors for Combustion Monitoring. Materials Science and Engineering: B 93(2002), 207.
Ayrıntılar
Birincil Dil
Türkçe
Konular
-
Bölüm
-
Yazarlar
Yayımlanma Tarihi
15 Ağustos 2018
Gönderilme Tarihi
14 Kasım 2017
Kabul Tarihi
-
Yayımlandığı Sayı
Yıl 2018 Cilt: 22 Sayı: 2
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