İsmail Altuntas profile image
İsmail Altuntas Dr. Sivas Cumhuriyet Üniversitesi
Publication 3 Review 2 CrossRef Cited 12
3 Publication
2 Review
12 CrossRef Cited

Research Fields

Photonics, Optoelectronics and Optical Communications

Institution

Sivas Cumhuriyet Üniversitesi

Publications

The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN
Authors: İzel Perkitel , İsmail Altuntas , İlkay Demir
Published: 2022 , Gazi University Journal of Science
DOI: 10.35378/gujs.822954
FAVORITE 0 TOTAL DOWNLOAD COUNT 1451

0

1451

The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures
Authors: İsmail Altuntas , Sezai Elagöz
Published: 2021 , International Journal of Innovative Engineering Applications
DOI: 10.46460/ijiea.898795
FAVORITE 0 TOTAL DOWNLOAD COUNT 796

0

796

XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates
Authors: İsmail Altuntas
Published: 2021 , Cumhuriyet Science Journal
DOI: 10.17776/csj.858546
FAVORITE 0 TOTAL DOWNLOAD COUNT 854

0

854

Articles published in
Cumhuriyet Science Journal
Cumhuriyet Science Journal
Gazi University Journal of Science
Gazi University Journal of Science
International Journal of Innovative Engineering Applications
International Journal of Innovative Engineering Applications

Reviews

Cumhuriyet Science Journal
Cumhuriyet Science Journal
International Journal of Innovative Engineering Applications
International Journal of Innovative Engineering Applications

Publications

The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN
Authors: İzel Perkitel , İsmail Altuntas , İlkay Demir
Published: 2022 , Gazi University Journal of Science
DOI: 10.35378/gujs.822954
CITED 10 FAVORITE 0 TOTAL DOWNLOAD COUNT 1451

10

0

1451

The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures
Authors: İsmail Altuntas , Sezai Elagöz
Published: 2021 , International Journal of Innovative Engineering Applications
DOI: 10.46460/ijiea.898795
CITED 1 FAVORITE 0 TOTAL DOWNLOAD COUNT 796

1

0

796

XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates
Authors: İsmail Altuntas
Published: 2021 , Cumhuriyet Science Journal
DOI: 10.17776/csj.858546
CITED 1 FAVORITE 0 TOTAL DOWNLOAD COUNT 854

1

0

854

Popular Publications: It is determined automatically by the researchers doing research in DergiPark according to the statistics of being added to the favorites. CrossRef Cited: The citations shown in DergiPark are drawn from CrossRef. For this, the cited and cited articles must be registered in CrossRef (DOI number). ^: Citation numbers are reflected in the system by DergiPark at certain periods.
Interactive Guide Tool
If you want to see the panel introduction, you can click Start Tour.