About
About
Roadmap
Trends
DOI Service
Subjects
Journals
Publishers
All
University
Government
TRH
Association
Foundation
Trade Association
Company
Person
Union
Researchers
Journal Wizard
Help
English
Turkish
English
Admin Panel
User Panel
My Journals
My Research
My Followers
Profile
Logout
Login
İsmail Altuntas
Dr.
Publication
3
Review
2
CrossRef Cited
10
3
Publication
2
Review
10
CrossRef Cited
Follow
Following
Edit My Profile
Followers
Following
Summary
Publications
Peer Review
Cited
Institution
Publications
The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN
Authors:
İzel Perkitel
,
İsmail Altuntas
,
İlkay Demir
Published: 2022 ,
Gazi University Journal of Science
DOI: 10.35378/gujs.822954
FAVORITE
0
TOTAL DOWNLOAD COUNT
1207
0
FAVORITE
1207
TOTAL DOWNLOAD COUNT
The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures
Authors:
İsmail Altuntas
,
Sezai Elagöz
Published: 2021 ,
International Journal of Innovative Engineering Applications
DOI: 10.46460/ijiea.898795
FAVORITE
0
TOTAL DOWNLOAD COUNT
628
0
FAVORITE
628
TOTAL DOWNLOAD COUNT
XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates
Authors:
İsmail Altuntas
Published: 2021 ,
Cumhuriyet Science Journal
DOI: 10.17776/csj.858546
FAVORITE
0
TOTAL DOWNLOAD COUNT
636
0
FAVORITE
636
TOTAL DOWNLOAD COUNT
Articles published in
Cumhuriyet Science Journal
Gazi University Journal of Science
International Journal of Innovative Engineering Applications
Reviews
Cumhuriyet Science Journal
International Journal of Innovative Engineering Applications
Publications
The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN
Authors:
İzel Perkitel
,
İsmail Altuntas
,
İlkay Demir
Published: 2022 ,
Gazi University Journal of Science
DOI: 10.35378/gujs.822954
CITED
8
FAVORITE
0
TOTAL DOWNLOAD COUNT
1207
8
CITED
0
FAVORITE
1207
TOTAL DOWNLOAD COUNT
The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures
Authors:
İsmail Altuntas
,
Sezai Elagöz
Published: 2021 ,
International Journal of Innovative Engineering Applications
DOI: 10.46460/ijiea.898795
CITED
1
FAVORITE
0
TOTAL DOWNLOAD COUNT
628
1
CITED
0
FAVORITE
628
TOTAL DOWNLOAD COUNT
XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates
Authors:
İsmail Altuntas
Published: 2021 ,
Cumhuriyet Science Journal
DOI: 10.17776/csj.858546
CITED
1
FAVORITE
0
TOTAL DOWNLOAD COUNT
636
1
CITED
0
FAVORITE
636
TOTAL DOWNLOAD COUNT
Interactive Guide Tool
If you want to see the panel introduction, you can click Start Tour.
Start Tour