İsmail Altuntas profile image
İsmail Altuntas Dr. Sivas Cumhuriyet Üniversitesi
Publication 4 Review 2 CrossRef Cited 13
4 Publication
2 Review
13 CrossRef Cited

Research Fields

Photonics, Optoelectronics and Optical Communications

Institution

Sivas Cumhuriyet Üniversitesi

Publications

Development of Sandwich AlN on PSS via Layered V/III Ratio Optimization
Authors: İsmail Altuntas , Ferhan Kübra Özbakır
Published: 2025 , Cumhuriyet Science Journal
DOI: 10.17776/csj.1698209
FAVORITE 0 TOTAL DOWNLOAD COUNT 139

0

139

The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN
Authors: İzel Perkitel , İsmail Altuntas , İlkay Demir
Published: 2022 , Gazi University Journal of Science
DOI: 10.35378/gujs.822954
FAVORITE 0 TOTAL DOWNLOAD COUNT 1807

0

1807

The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures
Authors: İsmail Altuntas , Sezai Elagöz
Published: 2021 , International Journal of Innovative Engineering Applications
DOI: 10.46460/ijiea.898795
FAVORITE 0 TOTAL DOWNLOAD COUNT 1183

0

1183

XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates
Authors: İsmail Altuntas
Published: 2021 , Cumhuriyet Science Journal
DOI: 10.17776/csj.858546
FAVORITE 0 TOTAL DOWNLOAD COUNT 937

0

937

Articles published in
Cumhuriyet Science Journal
Cumhuriyet Science Journal
Gazi University Journal of Science
Gazi University Journal of Science
International Journal of Innovative Engineering Applications
International Journal of Innovative Engineering Applications

Reviews

Cumhuriyet Science Journal
Cumhuriyet Science Journal
International Journal of Innovative Engineering Applications
International Journal of Innovative Engineering Applications

Publications

The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN
Authors: İzel Perkitel , İsmail Altuntas , İlkay Demir
Published: 2022 , Gazi University Journal of Science
DOI: 10.35378/gujs.822954
CITED 11 FAVORITE 0 TOTAL DOWNLOAD COUNT 1807

11

0

1807

The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures
Authors: İsmail Altuntas , Sezai Elagöz
Published: 2021 , International Journal of Innovative Engineering Applications
DOI: 10.46460/ijiea.898795
CITED 1 FAVORITE 0 TOTAL DOWNLOAD COUNT 1183

1

0

1183

XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates
Authors: İsmail Altuntas
Published: 2021 , Cumhuriyet Science Journal
DOI: 10.17776/csj.858546
CITED 1 FAVORITE 0 TOTAL DOWNLOAD COUNT 937

1

0

937

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