Arayüzey Doğal Oksit Tabakalı Al/p-Si/Al Yapıların Dielektrik Karakteristiklerine Ölçüm Frekansının Etkileri

Year 2020, Volume: 10 Issue: 1, 91 - 100, 01.03.2020

Mehmet Can Özdemir Ömer Sevgili İkram Orak Abdülmecit Türüt

https://doi.org/10.21597/jist.612518

Cited By: 3

Abstract

Deneysel olarak karakteristiklerini belirlemeye çalıştığımız arayüzey doğal oksit tabakalı Al/p-Si/Al metal/oksit tabaka/yarıiletken veya diğer bir adıyla metal/yalıtkan tabaka/yarıiletken (MIS) yapılar elde edilmiştir. Bu yapı için taban malzeme olarak 1-10 Ω-cm özdirençli p-Si yarıiletkeni kullanılmıştır. Arka yüzeyi omik kontaklı olan bu p-Si dilim, laboratuvar ortamında ön parlak yüzeyi üzerinde doğal oksit SiO2 tabakasının oluşması sağlanmıştır. Diyot parametrelerinin elde edilmesi için, yaygın olarak kullanılan, farklı frekanslarda kapasite-gerilim (C-V) kondüktans-gerilim (G-V) ölçümlerinden Al/p-Si MIS yapının deneysel frekans admittans karakteristikleri elde edilmiştir. Bu karakteristiklerinden, gerçek 𝜀′ ve sanal dielektrik 𝜀′′ sabiti, loss-tanjant (𝜀′′/𝜀′), gerçek 𝑀′ ve sanal elektriksel modulüs 𝑀′′ ve ac iletkenliği 𝜎𝑎𝑐 gibi parametreleri hesaplanmış ve gerekli grafikler çizimleri ve yorumları yapılmıştır.

Keywords

Metal/oksit tabaka/yarıiletken (MOS), Schottky diyotlar, Özellikler, kapasite-kondüktans, Dielektrik Spektroskopi

The Effect of Measurement Frequency on Dielectric Characteristics in Al/P-Si Structures with Interfacial Native Oxide Layer

Abstract

Al/p-Si/Al metal/oxide layer/semiconductor or so-called metal/insulating layer/semiconductor (MIS) structures with interfacial native oxide layer are experimentally determined. For this structure, p-Si semiconductor with 1-10 Ω-cm resistivity was used as base material. The native oxide SiO2 layer was formed on the front polished surface the p-Si wafer in the laboratory environment. In order to obtain diode parameters, it was determined the experimental frequency admittance characteristics of the Al/p-Si MIS structure from commonly used capacitance-voltage (C-V) conductance-voltage (G-V) measurements at different frequencies, and parameters such as the real 𝜀′ and imaginary dielectric 𝜀′′ constant, loss-tangent (𝜀′′/𝜀′), real 𝑀′ and imaginary electrical modulus 𝑀′′ and ac conductivity σac were calculated and interpreted.

Keywords

Metal/oxide layer/semiconductor (MIS), Schottky diodes, Dielectric Properties, Capacitance-conductance, Dielectric Spectroscopy

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