A Simple Test for Non-ideal Memristors
Öz
Semiconductor components must be tested before
their usage. The test for a diode is well-known. Memristor is a nonlinear
circuit element, whose existence has been predicted in 1971 and a memristive
system behaving as memristor has been found in 2008. It is actually a nonlinear
resistor with charge-dependency. In recent years, memristor has become an
important research area. In addition to ideal memristors, memristive systems
are nowadays also called memristors. However, memristor is not entirely known
as a circuit element and there is still research undergoing to model it.
Memristor has different models used in literature, such as linear dopant drift
models, nonlinear dopant drift models, and threshold-based models. If memristor
would become commercially available and start being commonly used in circuits,
it will also need testing methods to be used by circuit designers. In this
paper, by reviewing some of the memristor models given in literature, a simple
test is suggested to be applied for individual memristors.
Anahtar Kelimeler
Kaynakça
- [1] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, ”The missing memristor found,” Nature (London), Vol. 453, pp. 80-83, 2008.
- [2] Vongehr, Sascha, and Xiangkang Meng. "The missing memristor has not been found." Scientific reports 5 (2015).
- [3] L. O. Chua,” Memristor - The Missing Circuit Element,” IEEE Trans.Circuit Theory, Vol. 18, pp. 507-519, 1971.
- [4] L. O. Chua and S. M. Kang,” Memrisive devices and systems,” Proc.IEEE, Vol. 64, pp. 209-223, 1976.
- [5] Prodromakis, T., and C. Toumazou. "A review on memristive devices and applications." 2010 17th IEEE International Conference on Electronics, Circuits and Systems.
- [6] Pershin, Yu V., J. Martinez-Rincon, and M. Di Ventra. "Memory circuit elements: from systems to applications." Journal of Computational and Theoretical Nanoscience 8.3 (2011): 441-448.
- [7] Y. V. Pershin and M. Di Ventra, “Memory effects in complex materials and nanoscale systems,” Adv. Phys., vol. 60, pp. 145–227, Apr. 01, 2011, 2011.
- [8] L. Chua, “Resistance switching memories are memristors,” Appl. Phys. A, vol. 102, pp. 765–783, Mar. 01, 2011, 2011.
Ayrıntılar
Birincil Dil
İngilizce
Konular
Mühendislik
Bölüm
Araştırma Makalesi
Yayımlanma Tarihi
18 Temmuz 2019
Gönderilme Tarihi
24 Mart 2019
Kabul Tarihi
24 Haziran 2019
Yayımlandığı Sayı
Yıl 2019 Cilt: 2 Sayı: 1