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Double Gaussian Distribution of Inhomogeneous Barrier Heights in Ag/n-type GaP structure with rubrene interfacial layer

Cilt: 16 Sayı: 3 8 Eylül 2026
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Double Gaussian Distribution of Inhomogeneous Barrier Heights in Ag/n-type GaP structure with rubrene interfacial layer

Öz

This study investigates the barrier inhomogeneity of Ag/n-GaP structure with rubrene organic interface within temperature range of 100-325 K. To prepare Ag/Rubrene/n-GaP Schottky device, 5,6,11,12-tetraphenylnaphthacene (rubrene) organic thin film was grown using spin coating method on n-type GaP wafer. The current-voltage measurements of fabricated structure were realized as a function of temperature, and it displayed well-rectification behavior at all temperatures. The electrical parameters were calculated using standard Thermionic Emission Theory. The ideality factor and barrier height values were found to vary from 10.1 at 100 K to 4.41 at 325 K and from 0.285 eV at 100 K to 0.835 eV at 325 K, respectively. The temperature dependence of barrier properties of Ag/Rubrene/n-GaP structure was explained by a double Gaussian distribution owing to the inhomogeneity of barrier height at metal-semiconductor interface. At the same time, the conventional Richardson graph exhibited nonlinear behavior at low temperatures. The modified Richardson plot was employed to determine the A^* effective Richardson constant, which was determined to be 105 A/cm²K². This value is in agreement with theoretical value of n-GaP (98.4 A/cm²K²). As a result, the barrier inhomogeneity of Ag/Rubrene/n-GaP structure was successfully analyzed by double Gaussian distribution of barrier height.

Anahtar Kelimeler

Rubrene, n-type GaP, Barrier inhomogeneity, Gaussian distribution

Etik Beyan

The author declares that this study complies with Research and Publication Ethics.

Teşekkür

The author thanks Dr. Ö. F. YÜKSEL for his valuable contributions in the experimental process and analyses, and for his helpful comments and suggestions to improve this paper.

Kaynakça

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Kaynak Göster

APA
Akın, Ü. (2026). Double Gaussian Distribution of Inhomogeneous Barrier Heights in Ag/n-type GaP structure with rubrene interfacial layer. Karadeniz Fen Bilimleri Dergisi, 16(3), 1397-1410. https://doi.org/10.31466/kfbd.1915999
AMA
1.Akın Ü. Double Gaussian Distribution of Inhomogeneous Barrier Heights in Ag/n-type GaP structure with rubrene interfacial layer. KFBD. 2026;16(3):1397-1410. doi:10.31466/kfbd.1915999
Chicago
Akın, Ümmühan. 2026. “Double Gaussian Distribution of Inhomogeneous Barrier Heights in Ag/n-type GaP structure with rubrene interfacial layer”. Karadeniz Fen Bilimleri Dergisi 16 (3): 1397-1410. https://doi.org/10.31466/kfbd.1915999.
EndNote
Akın Ü (01 Eylül 2026) Double Gaussian Distribution of Inhomogeneous Barrier Heights in Ag/n-type GaP structure with rubrene interfacial layer. Karadeniz Fen Bilimleri Dergisi 16 3 1397–1410.
IEEE
[1]Ü. Akın, “Double Gaussian Distribution of Inhomogeneous Barrier Heights in Ag/n-type GaP structure with rubrene interfacial layer”, KFBD, c. 16, sy 3, ss. 1397–1410, Eyl. 2026, doi: 10.31466/kfbd.1915999.
ISNAD
Akın, Ümmühan. “Double Gaussian Distribution of Inhomogeneous Barrier Heights in Ag/n-type GaP structure with rubrene interfacial layer”. Karadeniz Fen Bilimleri Dergisi 16/3 (01 Eylül 2026): 1397-1410. https://doi.org/10.31466/kfbd.1915999.
JAMA
1.Akın Ü. Double Gaussian Distribution of Inhomogeneous Barrier Heights in Ag/n-type GaP structure with rubrene interfacial layer. KFBD. 2026;16:1397–1410.
MLA
Akın, Ümmühan. “Double Gaussian Distribution of Inhomogeneous Barrier Heights in Ag/n-type GaP structure with rubrene interfacial layer”. Karadeniz Fen Bilimleri Dergisi, c. 16, sy 3, Eylül 2026, ss. 1397-10, doi:10.31466/kfbd.1915999.
Vancouver
1.Ümmühan Akın. Double Gaussian Distribution of Inhomogeneous Barrier Heights in Ag/n-type GaP structure with rubrene interfacial layer. KFBD. 01 Eylül 2026;16(3):1397-410. doi:10.31466/kfbd.1915999